IP Library Granted Patent US 7,502,079
Granted Patent B2
US 7,502,079 · App. 11/290,589 · Granted Mar 10, 2009

Electro-optical device and electronic apparatus

Assignee: Seiko Epson Corporation
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Quick Facts
Patent No.
US 7,502,079
App. No.
11/290,589
Granted
Mar 10, 2009
Kind
B2
Abstract

An electro-optical device of the present invention includes pixel electrodes, TFTs electrically connected to the pixel electrodes, and scanning lines and data lines connected to the TFTs on a TFT array substrate. Each scanning line has a broad width portion as a gate electrode in a portion facing a channel area of the TFT and the narrow width portion. As a result, an electro-optical device capable of easily adjusting an arrangement of the gate electrodes and the scanning lines and at the same time precisely driving the TFTs is provided.

Claims (16)

1. An electro-optical device, comprising:

a thin-film transistor having a channel area that extends in a direction and that intersects a predetermined direction that intersects the direction;

a pixel electrode formed correspondingly to the thin-film transistor;

a data line extending in the direction in which the channel area extends, the data line having a broad-width portion that overlaps the channel area in plan view;

a scanning line extending in the predetermined direction and intersecting the data line and the channel area of the thin-film transistor, the scanning line having a broad-width portion in a portion overlapping the channel area of the thin-film transistor in plan view and a narrow width portion in another portion;

a storage capacitor including a pixel-potential capacitor electrode, a fixed-potential capacitor electrode, and a dielectric film interposed between the pixel-potential capacitor electrode and the fixed-potential capacitor electrode;

a capacitive line having a portion that serves as the fixed-potential capacitor electrode of the storage capacitor, the capacitive line having a portion extending along the scanning line and a portion extending along the data line, the portion extending along the data line having a width that is equal to or broader than a width of the data line; and

a contact hole electrically connecting the data line and the thin film transistor, the contact hole being positioned at a portion of the broad-width portion of the data line that extends beyond the channel area in a direction extending from the channel area toward the contact hole.

2. An electro-optical device, comprising:

a thin-film transistor having a channel area that extends in a direction and that intersects a predetermined direction that intersects the direction;

a pixel electrode formed correspondingly to the thin-film transistor;

a data line extending in the direction in which the channel area extends, the data line having a broad portion that overlaps the thin-film transistor and a non-broad portion that does not overlap the thin-film transistor, the broad portion being wider than the non-broad portion;

a scanning line extending in the predetermined direction and intersecting the data line and the channel area of the thin-film transistor, the scanning line having a broad-width portion in a portion facing the channel area of the thin-film transistor and a narrow width portion in another portion;

a storage capacitor including a pixel-potential capacitor electrode, a fixed-potential capacitor electrode, and a dielectric film interposed between the pixel-potential capacitor electrode and the fixed potential capacitor electrode; and

a capacitive line having a portion that serves as the fixed-potential capacitor electrode of the storage capacitor, the capacitive line having a portion extending along the scanning line and a portion extending along the data line, the portion extending along the data line having a width that is narrower than the broad portion of the data line and that is wider than the non-broad portion of the data line.

3. The electro-optical device according to claim 2 , further comprising a contact hole that electrically connects the thin-film transistor and the data line, the data line being continuously broad from the broad portion that overlaps the thin-film transistor a portion where the contact hole is located.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2019
From: SEIKO EPSON CORPORATION
To: 138 EAST LCD ADVANCEMENTS LIMITED
Reel/Frame 050197/0212 →
Priority Claims (2)
JP 2002-000713 · Jan 7, 2002 · national
JP 2002-363864 · Dec 16, 2002 · national
Continuity (2)
Division 1032037100 · Dec 17, 2002
Related Publication 20060082694A1 · Apr 20, 2006