Radiation-emitting semiconductor component
View Patent ↗A radiation-emitting semiconductor component, having a semiconductor layer sequence ( 1 ) with an active zone ( 2 ) provided for radiation generation and a first mirror arranged downstream of the active zone. The first mirror comprises a metal layer ( 4 ) and an intermediate layer ( 3 ) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer ( 4 ) which faces the active zone. The radiation-emitting semiconductor component is provided for operation with an optical resonator and for generating predominantly incoherent radiation as an RCLED or the radiation-emitting semiconductor component being provided for operation with an external optical resonator and for generating predominantly coherent radiation as a VECSEL.
1. A radiation-emitting semiconductor component, comprising:
a semiconductor layer sequence ( 1 ) having an active zone ( 2 ) adapted for radiation generation; and
a first mirror arranged downstream of the active zone;
wherein said first mirror comprises a metal layer ( 4 ) and an intermediate layer ( 3 ) made of a radiation-transmissive and electrically conductive material, said intermediate layer being arranged on that side of the metal layer ( 4 ) which faces the active zone; and
wherein the radiation-emitting semiconductor component is adapted for operation with an optical resonator and for generating incoherent radiation as an RCLED or for operation with an external optical resonator and for generating coherent radiation as a VECSEL.
2. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the intermediate layer ( 3 ) is at least partly formed in such a way that a radiation component reflected at the metal layer ( 4 ) and a radiation component reflected at that side of the intermediate layer ( 3 ) which faces the semiconductor layer sequence ( 1 ) are constructively superimposed.
3. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the intermediate layer ( 3 ) has a thickness D which satisfies the relationship
D
=
λ
4
n
z
+
k
·
λ
2
n
z
-
1
,
where λ denotes the vacuum wavelength of the radiation generated in the active zone ( 2 ), n z denotes the refractive index of the intermediate layer ( 3 ), k denotes a natural number including zero and 1 denotes a finite residual length other than zero.
4. The radiation-emitting semiconductor component as claimed in claim 3 , wherein
the residual length 1 is less than one quarter of the wavelength λ′, (λ/n z ), preferably less than one eighth of the wavelength λ′, where λ′ denotes the wavelength of the radiation generated in the active zone ( 2 ) in the intermediate layer ( 3 ).
5. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the intermediate layer contains an oxide, in particular a metal oxide.
6. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the first mirror ( 7 ) comprises a Bragg mirror ( 19 ).
7. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the metal layer ( 4 ) contains Au and the intermediate layer ( 3 ) contains ZnO.
8. The radiation-emitting semiconductor component as claimed in claim 6 , wherein
the Bragg mirror ( 19 ) is arranged on that side of the intermediate layer ( 3 ) which faces the active zone ( 2 ).
9. The radiation-emitting semiconductor component as claimed in claim 6 , wherein
the Bragg mirror ( 19 ) has not more than 20, semiconductor layer pairs.
10. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the resonator has the first mirror ( 7 ) and a second mirror ( 13 ), the second mirror being arranged on the side of the active zone ( 2 ) which is opposite to the first mirror.
11. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the semiconductor component is embodied as an RCLED and the optical resonator is an internal resonator.
12. The radiation-emitting semiconductor component as claimed in claim 10 , wherein
the reflectivity of the first mirror ( 7 ) is greater than the reflectivity of the second mirror ( 13 ).
13. The radiation-emitting semiconductor component as claimed in claim 10 , wherein
the radiation is coupled out from the semiconductor component through the second mirror.
14. The radiation-emitting semiconductor component as claimed in claim 10 , wherein
the second mirror is embodied as a Bragg mirror.
15. The radiation-emitting semiconductor component as claimed in claim 6 , wherein
the Bragg mirror or the Bragg mirrors contains or contain a III-V semiconductor material, preferably In x Ga y Al 1-x-y P, In x Ga y Al 1-x-y N or In x Ga y Al 1-x-y As, in each case where 0≦x≦1, 0≦y≦1 and x+y≦1.
16. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
a wavelength of the radiation generated in the active zone lies in the visible, in particular red, spectral range.
17. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the semiconductor layer sequence ( 1 ) is arranged on a carrier ( 6 ).
18. The radiation-emitting semiconductor component as claimed in claim 17 , wherein
the carrier ( 6 ) is different from a growth substrate ( 10 ) of the semiconductor layer sequence ( 1 ).
19. The radiation-emitting semiconductor component as claimed in claim 17 , wherein
the carrier ( 6 ) comprises a heat sink.
20. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
a contact structure ( 8 , 9 ) for making electrical contact with the semiconductor component is arranged on that side of the active zone which is remote from the first mirror.
21. The radiation-emitting semiconductor component as claimed in claim 20 , wherein
an electrical insulation material is arranged below the region of the active zone which is overlapped by the contact structure ( 8 , 9 ).
22. The radiation-emitting semiconductor component as claimed in claim 1 , wherein
the radiation-emitting semiconductor component is a thin-film component.
23. The radiation-emitting semiconductor component as claimed, in claim 1 , wherein
the semiconductor layer sequence ( 1 ), in particular the active zone, contains at least one III-V semiconductor material, preferably a material from the material systems In x Ga y Al 1-x-y P, In x Ga y Al 1-x-y N or In x Ga y Al 1-x-y As, in each case where 0≦x≦1, 0≦y≦1 and x+y≦1.