Surface acoustic wave device

1. A surface acoustic wave device comprising a piezoelectric substrate, an IDT which is formed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component, and grating reflectors on both sides of the IDT that reflect a surface acoustic wave, the surface acoustic wave device using an SH wave as an excitation wave,

wherein the piezoelectric substrate is a rotated Y-cut quartz plate having a cut angle θ set to a range of −64.0°<θ<−49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis,

wherein, when a wavelength of an excited surface acoustic wave is denoted by λ, an electrode film thickness H/λ normalized with wavelength of the IDT is set to a range of 0.04<H/λ<0.12, and

wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger width/(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.53≦mr ≦0.65.

2. A surface acoustic wave device comprising a piezoelectric substrate, an IDT which is formed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component, and grating reflectors on both sides of the IDT that reflect a surface acoustic wave, the surface acoustic wave device using an SH wave as an excitation wave,

the piezoelectric substrate being a rotated Y-cut quartz plate having a cut angle θ set to a range of −64.0°<θ<−49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis,

wherein, when a wavelength of an excited surface acoustic wave is denoted by λ, an electrode film thickness H/λ normalized with wavelength of the IDT is set to a range of 0.04<H/λ<0.12, and

wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger width/(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.55≦mr≦0.68.

3. A surface acoustic wave device comprising a piezoelectric substrate an IDT which is formed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component, and grating reflectors on both sides of the IDT that reflect a surface acoustic wave, the surface acoustic wave device using an SH wave as an excitation wave,

the piezoelectric substrate being a rotated Y-cut quartz plate having a cut angle θ set to a range of −64.0°<θ<−49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°∓5° with respect to an X crystalline axis,

wherein, when a wavelength of an excited surface acoustic wave is denoted by λ, an electrode film thickness H/λ normalized with wavelength of the IDT is set to a range of 0.04<H/λ<0.12, and

wherein, when a line occupancy rate mr of electrode fingers constituting the IDT is defined to be electrode finger widthl(electrode finger width+electrode finger spacing), the line occupancy rate mr is set to a range of 0.55≦mr≦0.65.

4. The surface acoustic wave device according to claim 1 , wherein the cut angle θ is set to a range of −61.4°<θ<−51.1°.

5. The surface acoustic wave device according to claim 1 , wherein the electrode film thickness H/λ is set to a range of 0.05<H/λ<0.10.

6. The surface acoustic wave device according to claim 1 , wherein the electrode film thickness H/λ is set to a range of 0.04≦H/λ≦0.08.

7. A surface acoustic wave device comprising a piezoelectric substrate, an IDT which is formed on the piezoelectric substrate and made of Al or an alloy containing Al as a main component, and grating reflectors on both sides of the IDT that reflect a surface acoustic wave, the surface acoustic wave device using an SH wave as an excitation wave,

the piezoelectric substrate being a rotated Y-cut quartz plate having a cut angle θ set to a range of −64.0°<θ<−49.3° rotated counterclockwise from a Z crystalline axis and a propagation direction of a surface acoustic wave set to a direction of 90°±5° with respect to an X crystalline axis, and

wherein grooves are formed in spaces between electrode fingers of the IDT, and when a depth of the grooves and a film thickness of a metal film are denoted by Hp and Hm, respectively, an electrode film thickness H/X normalized with wavelength λ of the surface acoustic wave is set to a range of 0.04<H/λ<0.12 (H=Hp+Hm).

8. A module apparatus or an oscillating circuit using the surface acoustic wave device according to claim 1 .

9. The surface acoustic wave device according to claim 2 , wherein the cut angle θ is set to a range of −61.4°<θ<−51.1°.

10. The surface acoustic wave device according to claim 3 , wherein the cut angle θ is set to a range of −61.4°<θ<−51.1°.

11. The surface acoustic wave device according to claim 2 , wherein the electrode film thickness H/λ is set to a range of 0.05<H/λ<0.10.

12. The surface acoustic wave device according to claim 3 , wherein the electrode film thickness H/λ is set to a range of 0.05<H/λ<0.10.

13. The surface acoustic wave device according to claim 2 , wherein the electrode film thickness H/λ is set to a range of 0.04≦H/λ≦0.08.

14. The surface acoustic wave device according to claim 3 , wherein the electrode film thickness H/λ is set to a range of 0.04≦H/λ≦0.08.

15. A module apparatus or an oscillating circuit using the surface acoustic wave device according to claim 2 .

16. A module apparatus or an oscillating circuit using the surface acoustic wave device according to claim 3 .

17. A module apparatus or an oscillating circuit using the surface acoustic wave device according to claim 7 .