Devices and methods for integrated circuit manufacturing

1. A process of manufacturing a multi-layered integrated circuit, comprising:

forming one or more conducting layers on a semiconductor substrate;

forming at least one shielding element isolating at least part of said one or more conducting layers, where the step of forming at least one shielding element further comprises:

growing a gate oxide layer that is positioned between the one or more conducting layers;

depositing a polycrystalline Silicon layer adjacent to the gate oxide layer;

etching the gate oxide and polycrystalline Silicon layers using a mask; and

doping the semiconductor substrate to increase conductance of exposed regions of the semiconductor substrate;

further processing said one or more conducting layers including etching a pre-drill slot region for an ink slot where the shielding element is a barrier around the pre-drill slot region.

2. A method of inhibiting delamination of a cavitation layer in a multi-layered integrated circuit, the method comprising:

forming a conductive layer that comprises a doped region in a substrate;

electrically isolating a first portion of the conductive layer from a second portion thereof with a shielding element;

depositing the cavitation layer over portions of the first portion and the second portion, and over the shielding element;

wherein the step of electrically isolating comprises the step of growing a gate oxide layer within a portion of the conductive layer; and

etching a pre-drill slot region for an ink slot where the shielding element is a barrier around the pre-drill slot region.

3. The method of claim 2 , further comprising the step of depositing a polycrystalline silicon layer over the gate oxide layer.

4. The method of claim 2 , wherein the cavitation layer comprises a material selected from the group consisting of Tantalum, SiC, and TiN.

5. A method of manufacturing for inhibiting delamination of a cavitation layer in a multi-layered integrated circuit comprising:

forming a conductive layer on a substrate;

electrically isolating a first portion of the conductive layer from a second portion thereof with a shielding element, where the electrically isolating comprises growing a gate oxide layer within a portion of the conductive layer;

depositing the cavitation layer over portions of the first portion and the second portion, and over the shielding element; and

etching a trough in the first portion of the conductive layer;

where the trough forms part of an ink slot pre-drill region and where the shielding element is a barrier around the trough.

6. The method of claim 5 , further comprising depositing a polycrystalline silicon layer over the gate oxide layer.

7. A process of manufacturing a multi-layered integrated circuit, comprising:

forming one or more conducting layers on a semiconductor;

forming at least one shielding element isolating at least part of said one or more conducting layers;

etching at least said shielding element, thereby forming a surface with both conducting layers and the at least one shielding element;

etching a pre-drill slot region for an ink slot where the at least one shielding element is a barrier around the pre-drill slot region; and

further processing said one or more conducting layers including:

doping the semiconductor to increase conductance of exposed areas;

wherein the forming at least one shielding element further comprises growing a gate oxide layer over a selected portion of the semiconductor, depositing a polycrystalline Silicon layer adjacent to a selected portion of the gate oxide layer, and etching the gate oxide and polycrystalline Silicon layers using a mask.