Liquid crystal display device
View Patent ↗A liquid crystal display device includes a thin film transistor formed on a substrate, the thin film transistor including a gate electrode; a gate insulation film formed on the gate electrode and the substrate; and a storage capacitor connected to the drain electrode, the storage capacitor being above the gate insulation film.
1. A liquid crystal display device comprising:
a thin film transistor formed on a substrate, the thin film transistor including a drain electrode, the substrate including:
at least one pixel electrode connected to the drain electrode;
at least one common electrode, the at least one pixel electrode and the at least one common electrode being formed on a same layer;
a gate line and a data line disposed on the substrate to define a pixel, the thin film transistor being formed at an intersection of the gate line and the data line;
a common line arranged in parallel with the gate line, the common line being connected to the at least one common electrode;
a liquid crystal layer disposed between the substrate and a second substrate opposite to the substrate; and
a storage capacitor connected to the drain electrode, the storage capacitor including:
a lower capacitor electrode extending from the drain electrode;
an upper capacitor electrode; and
a protective film between the lower capacitor electrode and the upper capacitor electrode.
2. The device of claim 1 , wherein the liquid crystal display device is an in-plane switching mode liquid crystal display device.
3. The device of claim 1 , wherein the at least one pixel electrode and the at least one common electrode are alternately formed on the protective film.
4. The device of claim 1 , wherein the at least one pixel electrode are parallel with the at least one common electrode.
5. The device of claim 1 , wherein the lower capacitor electrode and the drain electrode are substantially coplanar.
6. The device of claim 1 , further comprising a gate insulation film on the substrate.
7. The device of claim 6 , wherein the lower capacitor electrode is above the gate insulation film.
8. The device of claim 6 , wherein the storage capacitor is above the gate insulation film.
9. The device of claim 1 , wherein the lower capacitor electrode is integrally formed with the drain electrode.
10. The device of claim 1 , wherein the upper capacitor electrode extends from a common electrode.
11. The device of claim 10 , wherein the upper capacitor electrode is integrally formed with the common electrode.
12. The device of claim 1 , wherein the protective film is formed on top of the thin film transistor and the lower capacitor electrode.
13. The device of claim 1 , wherein the protective film has a thickness of about 500 to 2500 Å.
14. The device of claim 1 , wherein the protective film has a thickness of about 1500 to 2000 Å.
15. The device of claim 1 , wherein the lower capacitor electrode has a pixel voltage and the upper capacitor electrode has a common voltage.
16. A liquid crystal display device comprising:
a thin film transistor formed on a substrate, the thin film transistor including a drain electrodes, the substrate including:
at least one pixel electrode connected to the drain electrode, the at least one pixel electrode and at least one common electrode being formed on a same layer;
a gate line and a data line disposed on the substrate to define a pixel, the thin film transistor being formed at an intersection of the gate line and the data line;
a common line arranged in parallel with the gate line, the common line being connected to the at least one common electrode; and
a liquid crystal layer disposed between the substrate and a second substrate opposite to the substrate; and
a storage capacitor connected to the drain electrode, the storage capacitor including;
a lower capacitor electrode;
an upper capacitor electrode extending from at least one common electrode; and
a protective film between the lower capacitor electrode and the upper capacitor electrode.
17. The device of claim 16 , wherein the liquid crystal display device is an in-plane switching mode liquid crystal display device.
18. The device of claim 16 , wherein the at least one pixel electrode and the at least one common electrode are alternately formed on the protective film.
19. The device of claim 16 , wherein the at least one pixel electrode are parallel with the at least one common electrode.
20. The device of claim 16 , wherein the lower capacitor electrode extends from the drain electrode.
21. The device of claim 16 , wherein the lower capacitor electrode and the drain electrode are substantially coplanar.
22. The device of claim 16 , further comprising a gate insulation film on the substrate.
23. The device of claim 22 , wherein the lower capacitor electrode is above the gate insulation film.
24. The device of claim 22 , wherein the storage capacitor is above the gate insulation film.
25. The device of claim 16 , wherein the lower capacitor electrode is integrally formed with the drain electrode.
26. The device of claim 16 , wherein the upper capacitor electrode is integrally formed with the common electrode.
27. The device of claim 16 , wherein the protective film is formed on top of the thin film transistor and the lower capacitor electrode.
28. The device of claim 16 , wherein the protective film has a thickness of about 500 to 2500 Å.
29. The device of claim 16 , wherein the protective film has a thickness of about 1500 to 2000 Å.
30. The device of claim 16 , wherein the lower capacitor electrode has a pixel voltage and the upper capacitor electrode has a common voltage.