Organic light emitting display device and method of fabricating the same
View Patent ↗An organic light emitting display device and a method of fabricating the same. A dummy pattern is formed in an emission region to increase the step height of the emission region by an electrode material while a thin film transistor is fabricated, so that a distance between a pixel electrode and a donor film is decreased during fabrication of an organic layer. This reduced distance reduces laser energy for transfer using laser-induced thermal imaging, thus improving life span and efficiency of the device. Further, the pixel electrode can extend into a thin film transistor region and a capacitor region, thus enhancing an aperture ratio.
1. An organic light emitting display device, comprising:
an emission region including a pixel electrode, an organic layer that includes at least an emission layer, and an opposite electrode on a substrate, the emission region being defined by a pixel defining layer, a dummy pattern being arranged in the emission region under the pixel electrode;
a thin film transistor region including a gate electrode and source and drain electrodes; and
a capacitor region including a lower electrode and an upper electrode, the dummy pattern being adapted to increase a step height of the emission region.
2. The organic light emitting display device of claim 1 , wherein the pixel electrode includes a reflective electrode, and the opposite electrode includes a transparent electrode.
3. The organic light emitting display device of claim 1 , wherein the pixel electrode extends into the thin film transistor region and into the capacitor region.
4. The organic light emitting display device of claim 1 , wherein the organic layer further includes at least one layer selected from the group consisting of a hole injection layer, a hole transporting layer, a hole blocking layer, an electron transporting layer and an electron injection layer.
5. The organic light emitting display device of claim 1 , wherein the dummy pattern has a laminated structure of at least two materials selected from the group consisting of a polysilicon layer pattern, a gate electrode material, and source and drain electrode materials.
6. The organic light emitting display device of claim 1 , wherein the pixel defining layer has a thickness of 3,000 Å or less.
7. An organic light emitting display (OLED) device, comprising:
an emission region including a pixel electrode, an organic layer that includes at least an emission layer, and an opposite electrode on a substrate, the emission region being defined by a pixel defining layer, a height between a top surface of the pixel defining layer and a top surface of the pixel electrode being no more than 300 nm, a dummy pattern being arranged in the emission region under the pixel electrode;
a thin film transistor region including a gate electrode and source and drain electrodes; and
a capacitor region including a lower electrode and an upper electrode.
8. The OLED device of claim 7 , the pixel defining layer being perforated by an aperture exposing a portion of the pixel electrode within the pixel region, the aperture being no more than 300 nm deep.
9. The OLED device of claim 8 , the pixel defining layer perforated by the aperture, the top surface of the pixel defining layer not being flat.
10. The OLED device of claim 7 , each of the capacitor region, the thin film transistor region and the emission region being arranged side by side with each other and not on top of one another.
11. The OLED device of claim 7 , a top surface of the pixel defining layer being 300 nm above the top surface of an exposed portion of the pixel electrode.
12. The OLED device of claim 7 , wherein the organic layer further includes a layer selected from a group consisting of a hole injection layer, a hole transporting layer, an electron transporting layer and an electron injection layer.
13. The OLED device of claim 7 , the organic layer being transferred from a donor substrate to an exposed portion of the pixel electrode.
14. The OLED device of claim 7 , wherein a height between a top surface of the pixel defining layer and a top surface of the pixel electrode is 300 nm.