LCD device having common line extension and gate line recess of equal areas
View Patent ↗A liquid crystal display (LCD) device includes a first substrate, gate lines formed on the first substrate, data lines perpendicularly crossing the gate lines to define red, green, and blue (R/G/B) sub-pixels, thin film transistors (TFTs) disposed at each intersection where the gate lines cross the data lines, common lines disposed in parallel with the gate lines, the common lines including a common line capacitance (Cdc) control portion, pixel electrodes insulated from the common lines and connected to the TFTs, a second substrate opposite to the first substrate and bonded to the first substrate, and a liquid crystal layer disposed between the first and second substrates.
1. A liquid crystal display (LCD) device, comprising:
a first substrate;
gate lines formed on the first substrate;
data lines perpendicularly crossing the gate lines to define red, green, and blue (R/G/B) sub-pixels;
thin film transistors (TFTs) disposed at each intersection where the gate lines cross the data lines;
common lines disposed in parallel with the gate lines;
pixel electrodes insulated from the common lines and connected to the TFTs;
a second substrate opposite to the first substrate and bonded to the first substrate; and
a liquid crystal layer disposed between the first and second substrates, and
wherein an extension is formed on each of the common lines overlapped with the data lines in the G sub-pixels,
wherein a recess is formed on each of the gate lines overlapped with the data lines in the G sub-pixels,
wherein an area of the extension is equal to an area of the recess.
2. The LCD device according to claim 1 , further including counter electrodes that contact the common lines, wherein an electric field is formed between each counter electrode and each pixel electrode.
3. A method of fabricating a liquid crystal display (LCD) device, comprising:
forming gate lines on a first substrate;
forming common lines on the first substrate in parallel with the gate lines;
forming an insulating layer over the gate lines and the common lines;
forming data lines on the insulating layer perpendicularly crossing the gate lines to define red, green, and blue (R/G/B) sub-pixels;
forming thin film transistors (TFTs) at each intersection where the gate lines cross the data lines;
forming pixel electrodes connected to the TFTs; and
attaching a second substrate onto the first substrate with a liquid crystal layer disposed therebetween, and
wherein an extension is formed on each of the common lines overlapped with the data lines in the G sub-pixels,
wherein a recess is formed on each of the gate lines overlapped with the data lines in the G sub-pixels,
wherein an area of the extension is equal to an area of the recess.