Liquid crystal display device and fabrication method thereof

1. A method for fabricating an liquid crystal display (LCD) device, the method comprising:

providing first and second substrates;

depositing an amorphous silicon thin film and an n+ amorphous silicon thin film on the first substrate;

forming an active layer on the first substrate by selectively etching the amorphous silicon thin film through a masking process;

forming first and second ohmic contact layers on left and right sides of the active layer by selectively etching the n+ amorphous silicon thin film through the masking process;

forming a first insulation film on the first substrate including the active layer and the first and second ohmic contact layers;

forming a gate electrode to form a gap away from the first and second ohmic contact layers not to overlap with the first and second ohmic contact layers on the first insulation film;

forming a second insulation film on the first substrate including the gate electrode;

forming a pixel electrode on the second insulation film to overlap with a portion of the second ohmic contact layer;

forming a third insulation film on the first substrate including the pixel electrode;

forming a first contact hole exposing a portion of the first ohmic contact layer by removing a portion of the first to third insulation films;

forming a second contact hole simultaneously exposing a portion of the second ohmic contact layer and the overlapped portion of the pixel electrode by removing a portion of the first to third insulation films;

forming a source electrode electrically connected with the first ohmic contact layer through the first contact hole on the third insulation film;

forming a drain electrode electrically connected with the second ohmic contact layer and the pixel electrode through the same second contact hole on the third insulation film; and

attaching the first and second substrates.

2. A liquid crystal display (LCD) device, comprising:

an active layer formed of an amorphous silicon thin film on a first substrate;

first and second ohmic contact layers formed of an n+ amorphous silicon thin film on left and right sides of the active layer;

a first insulation film on the first substrate including the active layer and the first and second ohmic contact layers;

a gate electrode forming a gap away from the first and second ohmic contact layers not to overlap with the first and second ohmic contact layers on the first insulation film;

a second insulation film on the first substrate including the gate electrode;

a pixel electrode overlapping with a portion of the second ohmic contact layer on the pixel region of the second insulation film;

a third insulation film on the first substrate including the pixel electrode;

a first contact hole exposing a portion of the first ohmic contact layer through the first to third insulation films;

a second contact hole simultaneously exposing a portion of the second ohmic contact layer and the overlapped portion of the pixel electrode through the first to third insulation films;

a source electrode electrically connected with the first ohmic contact layer through the first contact hole on the third insulation film, wherein a portion of the source electrode is extended to form a data line;

a drain electrode electrically connected with the second ohmic contact layer and the pixel electrode through the same second contact hole on the third insulation film; and

a second substrate attached to the first substrate.

3. The device of claim 2 , wherein the first substrate includes a plastic material.