Mask and manufacturing method of a semiconductor device and a thin film transistor array panel using the mask

1. A method of manufacturing a semiconductor device, the method comprising:

coating a photoresist film on a substrate having at least two thin films;

exposing the photoresist film using one exposure mask;

developing the photoresist film to a pattern that includes a first portion and a second portion with the first portion being thicker than the second portion; and

etching the at least two thin films using the photoresist pattern as an etch mask,

wherein the exposure mask includes a translucent area that generates a phase difference in an incident light passing through the translucent area, the phase difference being in the range between about −70° and about +70°, and a light blocking opaque area.

2. The method of claim 1 , wherein the second portion corresponds to an area of the photoresist film receiving light passing through the translucent area, and the first portion corresponds to an area of the photoresist film receiving light passing through the light blocking opaque area.

3. The method of claim 2 , wherein the semiconductor device is used as a display panel.

4. The method of claim 2 , wherein the semiconductor device is used as a display panel for a liquid crystal display.

5. The method of claim 2 , wherein the semiconductor device is used as a display panel for an organic light emitting diode display.

6. The method of claim 1 , wherein the etching at least two thin films comprises:

removing the second portion of the photoresist film;

etching a first set of thin films that is exposed by removing the second portion of the photoresist film; and

removing the first portion of the photoresist film.

7. The method of claim 1 , wherein:

the at least two thin films comprises a gate insulating layer, an intrinsic amorphous-Silicon layer, an extrinsic amorphous-Silicon layer, and a conductive layer;

the pattern further comprises a third portion free of the photoresist film;

the etching the at least two thin films comprises:

removing the conductive layer, the extrinsic amorphous-Si layer, and the intrinsic amorphous-Silicon layer corresponding to the third portion of the pattern;

removing the second portion of the pattern;

removing the portion of the conductive layer and the extrinsic amorphous-silicon layer corresponding to the second portion of the pattern; and

removing the first portion of the pattern.

8. The method of claim 1 , wherein:

the at least two thin films comprises a gate insulating layer, an intrinsic amorphous-Silicon layer, an extrinsic amorphous-Silicon layer, and a conductive layer;

the pattern further comprises a third portion substantially free of the photoresist film;

the etching the at least two thin films comprises:

removing the portion of the conductive layer corresponding to the third portion of the pattern;

removing the second portion of the pattern;

removing the portion of the extrinsic amorphous-Silicon layer and the intrinsic amorphous-Silicon layer corresponding to the third portion of the pattern;

removing the portion of the conductive layer corresponding to the second portion of the pattern;

removing the first portion of the pattern; and

removing the portion of the extrinsic amorphous-Silicon layer corresponding to the second portion of the pattern.

9. The method of claim 1 , wherein the exposing of the photoresist film using the exposure mask by using one of a GH light with wavelength in the range of 400-440 nm, a KrF light with wavelength in the range of 230-260 nm, and a ArF light with wavelength in the range of 180-210 nm.

10. The method of claim 1 , wherein the exposure mask further includes a transparent area and wherein the translucent area have a transmittance of about 20%-40% of the transmittance of the transparent area.