Manufacturing method of a MEMS structure, a cantilever-type MEMS structure, and a sealed fluidic channel
View Patent ↗A method of manufacturing a MEMS structure including forming a porous layer having a predetermined thickness on the top surface of a substrate over an area where a cavity is to be formed; forming the cavity by etching the substrate below the porous layer; forming a membrane layer on the top surface to seal the cavity; and forming a structure on the upper side of the membrane layer. After forming a cantilever structure on the membrane layer and etching the membrane layer, a cantilever structure is produced in a floating state over the cavity. Also, at least one inlet hole and outlet hole can be formed in the porous layer and the membrane, thereby providing a sealed fluidic channel.
1. A method of manufacturing a MEMS structure which comprises
forming a trench in a P-type silicon substrate;
forming an oxide film on the substrate including a barrier by embedding the trench with the oxide film;
removing the oxide film formed on the substrate, except for the barrier embedded in the trench;
forming a mask layer on the substrate where the oxide film has been removed and removing a portion corresponding to an inside of the barrier;
forming a porous layer having a predetermined thickness on the upper side of the substrate corresponding to the inside of the barrier;
etching the substrate below the porous layer to form a cavity;
removing the mask layer formed outside the barrier;
sealing the upper side of the cavity with a membrane layer; and
forming a resonator structure on the upper side of the membrane layer.
2. The method of claim 1 , which comprises forming the trench by deep reactive ion etching.
3. The method of claim 1 , which comprises forming the oxide film by thermal oxidation of the silicon substrate or by thin film deposition on the silicon substrate.
4. The method of claim 1 , which comprises removing the oxide film by chemical mechanical polishing.
5. The method of claim 1 , wherein the mask layer is formed of a silicon nitride film, deposited by chemical vapor deposition, and said etching comprises reactive ion etching.
6. The method of claim 1 , which comprises forming the porous layer by immersing the P-type silicon substrate into a chemical solution to treat it electrochemically, and applying an electric current smaller than a critical current value.
7. The method of claim 1 , which comprises forming the cavity by immersing the P-type silicon substrate into a chemical solution to treat it electrochemically, and applying an electric current larger than a critical current value.
8. The method of claim 1 , wherein the membrane layer is formed of an insulating material.
9. The method of claim 8 , wherein the membrane layer is formed of a material selected from the group consisting of an oxide film, a silicon nitride film and a polysilicon film.
10. The method of claim 9 , which comprises forming the oxide film constituting the membrane layer by a thermal process or oxidation or thin film deposition, where the thin film deposition is chemical vapor deposition.
11. The method of claim 9 , which comprises forming the silicon nitride film constituting the membrane layer by thin film deposition, where the thin film deposition is chemical vapor deposition.
12. The method of claim 9 , which comprises forming the polysilicon film constituting the membrane layer by thin film deposition, where the thin film deposition is chemical vapor deposition or physical vapor deposition.