White-light emitting devices and methods for manufacturing the same

1. A white light emitting device for emitting white-light of at least a first color component with a range of first wavelengths, a second color component with a range of second wavelengths and a third color component with a range of third wavelengths, the first wavelengths shorter than the second wavelengths, the second wavelengths shorter than the third wavelengths, the white light emitting device comprising:

a baseboard;

a first light emitting device, disposed on the baseboard, having a first light source for emitting the first color component, and a second light source for emitting the second color component;

a transparent passivation layer with a substantially planar surface overlying the first light emitting device; and

a second light emitting device, disposed on the substantially planar surface of the transparent passivation layer, having a third light source for emitting the third color component responsive to the first and the second components.

2. The white light emitting device as claimed in claim 1 , wherein the first light source in the first light emitting device comprises:

a first active layer;

a hole source layer for providing holes to the first active layer; and

an electron source layer for providing electrons to the first active layer so that at least part of the electrons combine with at least part of the holes in the first active layer to produce light of the first wavelengths; and

wherein the second light source in the first light emitting device comprises:

a second active layer;

a hole source layer for providing holes to the second active layer; and

an electron source layer for providing electrons to the second active layer so that at least part of the electrons combine with at least part of the holes in the second active layer to produce light of the second wavelengths.

3. The white light emitting device as claimed in claim 2 , wherein:

the first and the second active layers are made substantially from InGaN;

the hole source layer is made substantially from p-type GaN; and

the electron source layer is made substantially from n-type GaN.

4. The white light emitting device as claimed in claim 1 , wherein the third light source in the second light emitting device is made substantially from AlGaInP.

5. The white light emitting device as claimed in claim 1 , wherein the third light source in the second light emitting device is made substantially from Ga x In 1−x P, where 0<x<1.

6. The white light emitting device as claimed in claim 1 , wherein the first color component is a blue color component, the second color component is a green color component, and the third color component is a red color component.

7. A method of fabricating a white light emitting device for emitting white-light of at least a first color component with a range of first wavelengths, a second color component with a range of second wavelengths and a third color component with a range of third wavelengths, the first wavelengths shorter than the second wavelengths, the second wavelengths shorter than the third wavelengths, comprising the steps of:

providing a baseboard;

forming a first light emitting device on the baseboard, the first light emitting device comprising a first light source for emitting the first color component, and a second light source for emitting the second color component;

depositing a transparent passivation layer with a substantially planar surface overlying the first light emitting device; and

forming a second light emitting device on the substantially planar surface of the transparent passivation layer, the second light emitting device comprising a third light source for emitting the third color component responsive to the first and the second components.

8. The method of fabricating the white light emitting device as claimed in claim 1 , wherein the step of forming the first light source in the first light emitting device comprises:

forming a hole source layer on the baseboard;

forming a first active layer on the hole source layer, wherein the hole source layer provides holes to the first active layer; and

forming an electron source layer on the first active layer, wherein the electron source layer provides electrons to the first active layer so that at least part of the electrons combine with at least part of the holes in the first active layer to produce light of the first wavelengths; and

wherein the step of forming the second light source in the first light emitting device comprises:

forming a hole source layer on the baseboard;

forming a second active layer on the hole source layer, wherein the hole source layer provides holes to the second active layer; and

forming an electron source layer on the second active layer, wherein the electron source layer provides electrons to the second active layer so that at least part of the electrons combine with at least part of the holes in the second active layer to produce light of the second wavelengths.

9. The method of fabricating the white light emitting device as claimed in claim 8 , wherein:

the first and the second active layers are made substantially from InGaN;

the hole source layer is made substantially from p-type GaN; and

the electron source layer is made substantially from n-type GaN.

10. The method of fabricating the white light emitting device as claimed in claim 7 , wherein the third light source in the second light emitting device is made substantially from AlGaInP.

11. The method of fabricating the white light emitting device as claimed in claim 7 , wherein the third light source in the second light emitting device is made substantially from Ga x In 1−x P, where 0<x<1.