IP Library Granted Patent US 8,088,483
Granted Patent B1
US 8,088,483 · App. 11/304,498 · Granted Jan 3, 2012

Process for group 10 metal nanostructure synthesis and compositions made using same

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Quick Facts
Patent No.
US 8,088,483
App. No.
11/304,498
Granted
Jan 3, 2012
Kind
B1
Abstract

Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.

Claims (35)

1. A nanostructure produced by a method for production of Group 10 metal nanostructures, the method comprising:

providing a precursor, the precursor comprising a Group 10 atom selected from the group consisting of Pd, Pt, and Ni, wherein

a) the Group 10 atom has an oxidation state of +2, the Group 10 atom being bonded to one or more atoms each of which is other than an oxygen atom or a halogen atom, or

b) the Group 10 atom has an oxidation state of 0; and

reacting the precursor to produce the nanostructures, wherein reaction of the precursor to produce the nanostructures is substantially catalytic RNA independent.

2. A nanostructure produced by a method for production of Group 10 metal nanostructures, the method comprising:

providing a precursor comprising a Group 10 atom selected from the group consisting of Pd, Pt, and Ni, which Group 10 atom has an oxidation state greater than zero;

providing a reducing agent; and

reacting the precursor and the reducing agent in the presence of a phosphine or an arsine to produce the nanostructures.

3. A composition comprising:

a precursor comprising a Group 10 atom selected from the group consisting of Pd, Pt, and Ni, wherein

a) the Group 10 atom has an oxidation state of +2, the Group 10 atom being bonded to one or more atoms each of which is other than an oxygen atom or a halogen atom, or

b) the Group 10 atom has an oxidation state of 0; and

a population of Group 10 metal nanostructures;

wherein the composition is substantially free of any RNA whose presence increases a rate of reaction of the precursor to form the nanostructures by at least two fold.

4. A composition comprising:

a precursor comprising a Group 10 atom selected from the group consisting of Pd, Pt, and Ni, wherein

a) the Group 10 atom has an oxidation state of +2, the Group 10 atom being bonded to one or more atoms each of which is other than an oxygen atom or a halogen atom, or

b) the Group 10 atom has an oxidation state of 0; and

at least a first surfactant, wherein the first surfactant is a thiol or a phosphine other than a tri-n-alkylphosphine.

5. A composition comprising:

a precursor comprising a Group 10 atom selected from the group consisting of Pd, Pt, and Ni, which Group 10 atom has an oxidation state greater than zero;

a reducing agent;

a phosphine or an arsine; and

a population of Group 10 metal nano structures.

6. A composition comprising:

a population of Group 10 metal nanostructures selected from the group consisting of Pd, Pt, and Ni; and

at least a first surfactant, wherein the first surfactant is an aryl thiol, an alkylaryl thiol, or a tri-alkylarylphosphine.

7. The composition of claim 6 , wherein the nanostructures comprise one or more of: nanocrystals, substantially spherical nanocrystals, nanorods, branched nanostructures, or nanotetrapods.

8. A composition comprising a population of Group 10 metal nanostructures selected from the group consisting of Pd, Pt, and Ni, which population exhibits a standard deviation in diameter of the nanostructures which is less than 20% of an average diameter of the nanostructures.

9. The composition of claim 8 , wherein the standard deviation is less than 15% of the average diameter.

10. The composition of claim 8 , wherein the standard deviation is less than 10% of the average diameter.

11. The composition of claim 8 , wherein the nanostructures are substantially spherical.

12. The composition of claim 8 , wherein the average diameter is less than 5.0 nm.

13. The composition of claim 12 , wherein the average diameter is less than 4.0 nm.

Assignments (3)
RELEASE OF SECURITY INTEREST IN INTELLECTUAL PROPERTY COLLATERAL AT REEL/FRAME NO. 49170/0482 Recorded Jul 1, 2021
From: OCEAN II PLO, LLC, AS AGENT
To: NANOSYS, INC.
Reel/Frame 056752/0073 →
SECURITY INTEREST Recorded Jan 17, 2019
From: NANOSYS, INC.
To: OCEAN II PLO, LLC
Reel/Frame 049170/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2006
From: WHITEFORD, JEFFERY A.; BURETEA, MIHAI A.; FREEMAN, WILLIAM P.; PARCE, J. WALLACE; QIAN, BAIXIN; SCHER, ERIK C.
To: NANOSYS, INC.
Reel/Frame 017398/0500 →