Solar cell having polymer heterojunction contacts
View Patent ↗A solar cell having backside contacts is economically fabricated through use of acceptor and donor polymers which are inkjet printed in interleaved patterns on the back surface as the carrier accepting electrodes of the solar cell. The polymers can be placed on a tunnel oxide on the surface of a semiconductor substrate, or the polymers can be in direct contact with the semiconductor substrate. Electrical patterns interconnecting the acceptor and donor polymer patterns can also be formed by inkjet printing a seed layer and then electroplating the seed layer. Advantageously, high temperature processing is not required in the process as is required in conventional solar cell fabrication using dopant implants into the semiconductor substrate. In alternative embodiments, doped contacts are diffused in the top surface and a polymer contact is formed over the back surface.
1. A solar cell comprising:
a) an inorganic semiconductor body having a first surface on a light-receiving side and a second opposing surface on a device side;
b) a first dielectric layer on the first surface and a second tunneling dielectric layer on the second surface;
c) a first pattern of acceptor polymer over the second surface, and a second pattern of donor polymer over the second surface and interleaved with the first pattern of acceptor polymer; and
d) a first conductive pattern electrically connected to the acceptor polymer, and a second conductive pattern electrically connected to the donor polymer.
2. The solar cell as defined by claim 1 and further including a dielectric polymer over the acceptor polymer and the donor polymer on the second surface.
3. The solar cell as defined by claim 2 wherein the acceptor polymer and the donor polymer are spaced from the second surface by the second dielectric layer.
4. The solar cell as defined by claim 3 wherein the second dielectric layer comprises a layer of tunnel oxide.
5. The solar cell as defined by claim 4 wherein the semiconductor body comprises silicon and the layer of tunnel oxide comprises silicon oxide.
6. The solar cell as defined by claim 5 wherein the first and second conductive patterns are selected from the group consisting of aluminum and copper.
7. The solar cell as defined by claim 6 wherein the first pattern of acceptor polymer, the second pattern of donor polymer, and the dielectric polymer are inkjet printed on the second surface.
8. The solar cell as defined by claim 7 wherein the first conductive pattern and the second conductive pattern are inkjet printed.
9. The solar cell as defined by claim 8 wherein the first dielectric layer comprises silicon oxide.
10. The solar cell as defined by claim 9 and further including a layer of doped silicon carbide over the first dielectric layer.
11. The solar cell as defined by claim 2 wherein the acceptor polymer and the donor polymer are in contact with the second surface.
12. The solar cell as defined by claim 11 wherein the semiconductor body comprises silicon.
13. The solar cell as defined by claim 12 wherein the first and second conductive patterns are selected from the group consisting of aluminum and copper.
14. The solar cell as defined by claim 13 wherein the first pattern of acceptor polymer, the second pattern of donor polymer, and the dielectric polymer are inkjet printed on the second surface.
15. The solar cell as defined by claim 14 wherein the first conductive pattern and the second conductive pattern are inkjet printed.
16. The solar cell as defined by claim 15 wherein the first dielectric layer comprises silicon oxide.
17. The solar cell as defined by claim 16 and further including a layer of doped silicon carbide over the first dielectric layer.
18. The solar cell as defined by claim 1 wherein the first surface is textured.
19. A solar cell comprising:
a) an inorganic semiconductor body having first and second opposing major surfaces, wherein the first surface is on a light-receiving side, and the second surface is on a device side;
b) a first dielectric layer on the first surface and a second dielectric layer on the second surface, wherein the second dielectric layer is a tunneling dielectric layer;
c) a first polymer pattern over the second surface;
d) a second polymer pattern over the second surface, the first polymer pattern and the second polymer pattern defining carrier collection contacts for the solar cell;
e) a first conductive pattern electrically connecting the first polymer pattern over the second surface, and f) a second conductive pattern electrically connecting the second polymer pattern over the second surface.
20. The solar cell as defined by claim 19 and further including a dielectric polymer over the second surface and abutting the second polymer pattern.
21. The solar cell as defined by claim 20 wherein the second polymer pattern is spaced from the second surface by the second dielectric layer.
22. The solar cell as defined by claim 21 wherein the semiconductor body comprises silicon and the second dielectric layer comprises a layer of tunnel oxide.
23. The solar cell as defined by claim 20 wherein the second polymer pattern over the second surface contacts the second surface.
24. The solar cell as defined by claim 19 wherein the first polymer pattern has P type conductivity and the second polymer pattern comprises donor polymer.
25. The solar cell as defined by claim 19 wherein the first polymer pattern has N type conductivity and the second polymer pattern comprises acceptor polymer.
26. In a method of fabricating a solar cell, the steps of fabricating carrier accepting contacts comprising:
a) providing an inorganic semiconductor substrate having first and second opposing major surfaces wherein the first surface is on a light-receiving side and the second surface is on a device side;
b) forming a first carrier receiving polymer pattern over the second major surface by inkjet printing; and c) forming a second carrier generating polymer pattern over the second major surface by inkjet printing.
27. The method of claim 26 , further including, prior to forming the first and second polymer patterns, the steps of:
d) forming a tunneling dielectric layer on the second major surface; and
e) forming a dielectric layer on the first major surface.
28. The method of claim 26 , wherein the inorganic semiconductor substrate comprises a silicon substrate.