Stacked photovoltaic device and method of manufacturing the same
View Patent ↗A back metal electrode, a bottom cell using microcrystalline silicon for a photoelectric conversion layer, a front cell using amorphous silicon for a photoelectric conversion layer, and a transparent front electrode are formed in this order on a supporting substrate. At least one of the concentration of impurities contained in the front photoelectric conversion layer and the concentration of impurities contained in the bottom photoelectric conversion layer is controlled such that the concentration of impurities in the bottom photoelectric conversion layer is higher than the concentration of impurities in the front photoelectric conversion layer. Impurities do not include a p-type dopant or an n-type dopant but are any one, two, or all of carbon, nitrogen, and oxygen.
1. A stacked photovoltaic device having a light incidence surface, comprising
a plurality of photovoltaic cells stacked and each including a photoelectric conversion layer composed of a substantially intrinsic semiconductor, said plurality of photovoltaic cells including a first photovoltaic cell closest to the light incidence surface and at least a second photovoltaic cell,
the photoelectric conversion layer in the first photovoltaic cell closest to the light incidence surface including an amorphous semiconductor, and the photoelectric conversion layer in said second photovoltaic cell including a non-single crystalline semiconductor containing crystal grains, and
the concentration of impurities contained in the photoelectric conversion layer in said second photovoltaic cell being higher than the concentration of impurities contained in the photoelectric conversion layer in said first photovoltaic cell.
2. The photovoltaic device according to claim 1 , wherein
said non-single crystalline semiconductor is a microcrystalline semiconductor containing crystal grains having a diameter of not more than 1 μm.
3. The photovoltaic device according to claim 1 , wherein
said impurities include carbon, the concentration of carbon contained in the photoelectric conversion layer in said second photovoltaic cell being higher than the concentration of carbon contained in the photoelectric conversion layer in said first photovoltaic cell.
4. The photovoltaic device according to claim 1 , wherein
said impurities include nitrogen, the concentration of nitrogen contained in the photoelectric conversion layer in said second photovoltaic cell being higher than the concentration of nitrogen contained in the photoelectric conversion layer in said first photovoltaic cell.
5. The photovoltaic device according to claim 1 , wherein
said impurities include oxygen, the concentration of oxygen contained in the photoelectric conversion layer in said second photovoltaic cell being higher than the concentration of oxygen contained in the photoelectric conversion layer in said first photovoltaic cell.
6. A method of manufacturing a stacked photovoltaic device, comprising the steps of:
forming a plurality of photovoltaic cells in order, each comprising a photoelectric conversion layer composed of a substantially intrinsic semiconductor, said plurality of photovoltaic cells including a first photovoltaic cell closest to the light incidence surface and at least a second photovoltaic cell,
the photoelectric conversion layer in the first photovoltaic cell including an amorphous semiconductor, and the photoelectric conversion layer in the second photovoltaic cell including a non-single crystalline semiconductor containing crystal grains; and
adjusting at least one of the formation condition of the photoelectric conversion layer in said first photovoltaic cell and the formation condition of the photoelectric conversion layer in said second photovoltaic cell such that the concentration of impurities contained in the photoelectric conversion layer in said second photovoltaic cell is higher than the concentration of impurities contained in the photoelectric conversion layer in said first photovoltaic cell.
7. The method according to claim 6 , wherein
said non-single crystalline semiconductor is a microcrystalline semiconductor containing crystal grains having a diameter of not more than 1 μm.
8. The method according to claim 6 , wherein
said impurities include carbon, and
said adjusting step comprises the step of adjusting at least one of the formation condition of the photoelectric conversion layer in said first photovoltaic cell and the formation condition of the photoelectric conversion layer in said second photovoltaic cell such that the concentration of carbon contained in the photoelectric conversion layer in said second photovoltaic cell is higher than the concentration of carbon contained in the photoelectric conversion layer in said first photovoltaic cell.
9. The method according to claim 6 , wherein
said impurities include nitrogen, and
said adjusting step comprises the step of adjusting at least one of the formation condition of the photoelectric conversion layer in said first photovoltaic cell and the formation condition of the photoelectric conversion layer in said second photovoltaic cell such that the concentration of nitrogen contained in the photoelectric conversion layer in said second photovoltaic cell is higher than the concentration of nitrogen contained in the photoelectric conversion layer in said first photovoltaic cell.
10. The method according to claim 6 , wherein
said impurities include oxygen, and
said adjusting step comprises the step of adjusting at least one of the formation condition of the photoelectric conversion layer in said first photovoltaic cell and the formation condition of the photoelectric conversion layer in said second photovoltaic cell such that the concentration of oxygen contained in the photoelectric conversion layer in said second photovoltaic cell is higher than the concentration of oxygen contained in the photoelectric conversion layer in said first photovoltaic cell.