Nitride semiconductor light-emitting device and method for fabrication thereof
View Patent ↗An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
1. A nitride semiconductor light-emitting device, comprising:
a nitride-based III-V group compound semiconductor layer formed of a hexagonal crystal; and
an optical resonator formed in the nitride-based III-V group compound semiconductor layer;
wherein an adhesion layer of a hexagonal crystal AlN is formed in contact with the nitride-based III-V group compound semiconductor layer forming a facet of the optical resonator, and
a facet coat is formed on a surface of the adhesion layer.
2. The nitride semiconductor light-emitting device of claim 1 ,
wherein the adhesion layer is formed between a light output facet of the optical resonator and the facet coat.
3. The nitride semiconductor light-emitting device of claim 1 ,
wherein a layer thickness of the adhesion layer is 20 nm or less.
4. The nitride semiconductor light-emitting device of claim 1 ,
wherein the facet coat contains oxide.
5. The nitride semiconductor light-emitting device of claim 4 ,
wherein the oxide is either in a single layer of oxide of one element selected from the group of Al, Si, Ti, Hf, Nb, Ta, and Zr, or in multiple layers including a layer of oxide of one element selected from the group of Al, Si, Ti, Hf, Nb, Ta, and Zr.
6. The nitride semiconductor light-emitting device of claim 1 ,
wherein the facet coat is nitride.
7. The nitride semiconductor light-emitting device of claim 1 ,
wherein the facet coat is composed either of a single layer of Si nitride, or of multiple layers including a layer of Si nitride and a layer of Si oxide.
8. The nitride semiconductor light-emitting device of claim 1 ,
wherein the facet coat is Al oxide.
9. The nitride semiconductor light-emitting device of claim 1 ,
wherein the adhesion layer is fabricated by magnetron sputtering, plasma CVD, or ECR sputtering.
10. A method for fabricating a nitride semiconductor light-emitting device, the method comprising the steps of:
forming a nitride-based III-V group compound semiconductor layer formed of a hexagonal crystal;
forming an optical resonator of the nitride-based III-V group compound semiconductor layer by cleaving the nitride-based III-V group compound semiconductor layer;
cleaning a facet of the optical resonator formed by cleavage by using an inert gas;
forming a layer of aluminum nitride of a hexagonal crystal in contact with the nitride-based III-V group compound semiconductor layer forming the cleaned facet of the optical resonator; and
forming a facet coat on a surface of the layer of aluminum nitride.
11. The method for fabricating a nitride semiconductor light-emitting device of claim 10 ,
wherein the inert gas is a noble gas.
12. The method for fabricating a nitride semiconductor light-emitting device of claim 10 ,
wherein the inert gas is an Ar gas.
13. The method for fabricating a nitride semiconductor light-emitting device of claim 10 ,
wherein the inert gas is a nitrogen gas.