Method for forming fine patterns using soft mold

1 . A method for forming a fine pattern using a soft mold, comprising:

forming the fine pattern on a substrate using the soft mold;

treating the substrate, on which the fine pattern is formed, with plasma; and

depositing at least one of an inorganic film and an organic film on the substrate on which the fine pattern is formed.

2 . The method as claimed in claim 1 , wherein the fine pattern is formed based on one of capillary force lithography, in-plane printing, and micro-contact printing techniques.

3 . The method as claimed in claim 1 , wherein the substrate is treated with plasma using at least one of O 2 , Ar, H 2 , corona, and He.

4 . The method as claimed in claim 3 , wherein the substrate is treated with plasma using H 2 in the range of a flow rate of approximately 100 sccm, pressure of approximately 100 mTorr to approximately 200 mTorr, power of approximately 400 W to approximately 800 W, and time of approximately 50 sec to approximately 100 sec.

5 . The method as claimed in claim 1 , wherein the soft mold is embossed or concaved with a predetermined shape on a surface and is made of polydimethylsiloxane (PDMS).

6 . A method for forming a fine pattern using a soft mold, comprising:

arranging the soft mold on a substrate on which a solidified material film is formed;

contacting the soft mold with the solidified material film to form the fine pattern;

stripping the soft mold from the substrate;

treating the substrate, on which the fine pattern is formed, with plasma; and

depositing at least one of an inorganic film and an organic film on the substrate on which the fine pattern is formed.

7 . The method as claimed in claim 6 , wherein the solidified material film is made of at least one of a nano material, polyaniline, and a conductive high polymer such as PEDOT:PSS.

8 . The method as claimed in claim 6 , wherein the substrate is treated with plasma using at least one of O 2 , Ar, H 2 , corona, and He.

9 . The method as claimed in claim 8 , wherein the substrate is treated with plasma using H2 in the range of a flow rate of approximately 100 sccm, pressure of approximately 100 mTorr to approximately 200 mTorr, power of approximately 400 W to approximately 800 W, and time of approximately 50 sec to approximately 100 sec.

10 . The method as claimed in claim 6 , wherein the soft mold has a surface which is embossed or concaved with a predetermined shape, and is made of polydimethylsiloxane (PDMS).

11 . A method for forming a fine pattern using a soft mold, comprising:

arranging the soft mold on a substrate on which a liquid material film is formed;

contacting the soft mold with the liquid material film to form the fine pattern;

curing the fine pattern;

stripping the soft mold from the substrate;

treating the substrate, on which the fine pattern is formed, with plasma; and

depositing at least one of an inorganic film and an organic film on the substrate on which the fine pattern is formed.

12 . The method as claimed in claim 11 , wherein the substrate is treated with plasma using at least one of O 2 , Ar, H 2 , corona, and He.

13 . The method as claimed in claim 11 , wherein the soft mold has a surface which is embossed or concaved with a predetermined shape, and is made of polydimethylsiloxane (PDMS).

14 . The method as claimed in claim 11 , wherein the fine pattern is UV-cured or thermally cured.

15 . A method for forming a fine pattern using a soft mold, comprising:

arranging the soft mold, which is coated with a nano material on an embossed surface, on a substrate;

printing the nano material coated on the soft mold on the substrate to form the fine pattern;

treating the substrate, on which the fine pattern is formed, with plasma; and

coating at least one of an inorganic film and an organic film on the substrate on which the fine pattern is formed.

16 . The method as claimed in claim 15 , wherein the soft mold is made of PDMS.

17 . The method as claimed in claim 15 , wherein the substrate is treated with plasma using at least one of O 2 , Ar, H 2 , corona, and He.

18 . The method as claimed in claim 15 , further comprising printing polyaniline or a conductive high polymer such as PEDOT:PSS on the substrate.