Patterned photovoltaic cell
View Patent ↗Patterned photovoltaic cells, as well as related components and methods, are disclosed.
1. A formulation, comprising:
cis-RuLL′(NCS) 2 , wherein L comprises a first 2,2′-bipyridyl and L′ comprises a second 2,2′-bipyridyl, and
an organic solvent comprising a mixture of g-butyrolactone and 1-methoxy-2-propanol.
2. The formulation of claim 1 , wherein the first 2,2′-bipyridyl is the same as the second 2,2′-bipyridyl.
3. The formulation of claim 1 , wherein L comprises 4,4′-dicarboxylic acid-2,2′-bipyridyl and L′ comprises 4,4′-dinonyl-2,2′-bipyridyl.
4. The formulation of claim 1 , wherein the formulation comprises about 5 mM cis-RuLL′(NCS) 2 .
5. The formulation of claim 1 , wherein the formulation comprises about 30 mM cis-RuLL′(NCS) 2 .
6. The formulation of claim 1 , wherein the formulation comprises about 60 mM cis-RuLL′(NCS) 2 .
7. The formulation of claim 1 , further comprising a thickening agent.
8. The formulation of claim 7 , wherein the thickening agent comprises fumed silica particles or poly(propylene glycol).
9. The formulation of claim 8 , wherein the fumed silica particles are hydrophobic.
10. The formulation of claim 8 , wherein a surface of the fumed silica particles is modified with poly(dimethyl siloxane) moieties.
11. The formulation of claim 8 , further comprising about 1 wt % to about 20 wt % of the fumed silica particles.
12. The formulation of claim 8 , further comprising about 12 wt % of the fumed silica particles.
13. The formulation of claim 1 , wherein g-butyrolactone and 1-methoxy-2-propanol are mixed at a ratio of about 1:5 vol./vol. to about 1:10 vol./vol.
14. The formulation of claim 13 , further comprising fumed silica particles.
15. The formulation of claim 14 , wherein the formulation comprises about 1 wt % to about 20 wt % of the fumed silica particles.
16. The formulation of claim 14 , wherein the formulation comprises about 12 wt % of the fumed silica particles.
17. The formulation of claim 1 , further comprising poly(propylene glycol).
18. The formulation of claim 17 , wherein g-butyrolactone, 1-methoxy-2-propanol, and poly(propylene glycol) are mixed at a ratio of about 1:5:2 vol./vol./vol.
19. The formulation of claim 1 , wherein the formulation comprises at least about 5 mM cis-RuLL′(NCS) 2 .
20. The formulation of claim 1 , wherein the formulation comprises at least about 30 mM cis-RuLL′(NCS) 2 .
21. The formulation of claim 1 , wherein the formulation comprises at least about 60 mM cis-RuLL′(NCS) 2 .
22. A method, comprising:
disposing a formulation comprising cis-RuLL′(NCS) 2 and a first organic solvent on a first material to form a photoactive layer, wherein L comprises a first 2,2′-bipyridyl, L′ comprises a second 2,2′-bipyridyl, and the first organic solvent comprising a mixture of g-butyrolactone and 1-methoxy-2-propanol;
disposing the photoactive layer between two electrodes to provide a photovoltaic cell.
23. The method of claim 22 , wherein the first 2,2′-bipyridyl is the same as the second 2,2′-bipyridyl.
24. The method of claim 22 , wherein L comprises 4,4′-dicarboxylic acid-2,2′-bipyridyl and L′ comprises 4,4′-dinonyl-2,2′-bipyridyl.
25. The method of claim 22 , wherein the formulation further comprises a thickening agent.
26. The method of claim 25 , wherein the thickening agent comprises fumed silica particles or poly(propylene glycol).
27. The method of claim 25 , further comprising substantially removing the thickening agent by washing the photoactive layer with a second organic solvent.
28. The method of claim 27 , wherein the second organic solvent is an alcohol.
29. The method of claim 22 , wherein 65 mg of the cis-RuLL′(NCS) 2 is absorbed onto 1 g of the first material in at most about 5 minutes.
30. The method of claim 22 , wherein 65 mg of the cis-RuLL′(NCS) 2 is absorbed onto 1 g of the first material in at most about 3 minutes.
31. The method of claim 22 , wherein 65 mg of the cis-RuLL′(NCS) 2 is absorbed onto 1 g of the first material in at most about 1 minute.
32. The method of claim 22 , wherein the first material comprises a semiconductor material or an electron acceptor material.