Method of manufacturing semiconductor device
An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming an insulation layer on a silicon substrate; forming a shallow trench isolation (STI) pattern by a photolithography and etching process; forming a high density plasma (HDP) oxide layer on the STI pattern; forming a barrier layer on the HDP oxide layer; patterning the barrier layer by a photolithography and etching process; and planarizing the HDP oxide layer by CMP. The adoption of the barrier layer can prevent the occurrence of dishing, so pattern failures due to dishing can be suppressed.
1 . A method of manufacturing a semiconductor device, comprising:
forming an insulation layer on a silicon substrate;
forming a shallow trench isolation (STI) pattern by a photolithography and etching process;
forming a high density plasma (HDP) oxide layer on the STI pattern;
forming a barrier layer on the HDP oxide layer;
patterning the barrier layer by a photolithography and etching process; and
planarizing the HDP oxide layer by CMP.
2 . The method of claim 1 , wherein the barrier layer is formed to a thickness of 500 Å-1500 Å.
3 . The method of claim 1 , wherein the barrier layer is formed as a silicon nitride layer.
4 . The method of claim 1 , wherein the barrier layer is formed as a silicon nitride layer having a thickness of 500 Å-1500 Å.
5 . The method of claim 1 , wherein, after patterning the barrier layer, the barrier layer is confined on a wide STI region.
6 . The method of claim 1 , wherein the insulation layer is formed by sequentially forming a silicon oxide layer and a silicon nitride layer.