Fabricating method for thin film transistor substrate and thin film transistor substrate using the same
View Patent ↗A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.
1. A fabricating method of a thin film transistor substrate, the method comprising:
forming a gate electrode on a substrate;
forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed;
forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and
forming a source electrode and a drain electrode on the active layer.
2. The fabricating method according to claim 1 , further comprising:
forming a passivation film having a contact hole that exposes a portion of the drain electrode; and
forming a pixel electrode connected to the drain electrode through the contact hole.
3. The fabricating method according to claim 1 , wherein the step of forming the gate insulating film includes:
aligning a soft mold or hard mold having a projected part, with the area where the active layer of the thin film transistor is to be formed;
making the soft mold or hard mold to contact a gate insulating material spread on the substrate; and
forming a groove in the gate insulating material by applying pressure to the soft mold or hard mold.
4. The fabricating method according to claim 1 , wherein the gate insulating film is made of an inorganic or organic hybrid insulating material.
5. The fabricating method according to claim 1 , wherein the step of forming the active layer of the thin film transistor includes:
spreading the nanowire into the groove of the gate insulating film by use of an inkjet.
6. The fabricating method according to claim 5 , wherein the nanowire is dissolved in an alcohol system solvent, so as to be spread by the inkjet.
7. The fabricating method according to claim 1 , wherein the step of forming the active layer of the thin film transistor includes:
heat-treating end portions of the nanowire connected to the source electrode and the drain electrode.
8. The fabricating method according to claim 1 , further comprising:
forming a high molecular insulating film on the active layer of the thin film transistor, so as to fix the location of the nanowire in the groove of the gate insulating film.
9. A method of forming a thin film transistor of a liquid crystal display (LCD) device, the method comprising:
forming a gate electrode on a substrate;
forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of the thin film transistor is to be formed;
forming the active layer of the thin film transistor by forming a nanowire in the groove of the gate insulating film; and
forming a source electrode and a drain electrode of the thin film transistor on the active layer.
10. The method according to claim 9 , wherein the step of forming the gate insulating film includes:
aligning a mold having a projected part, with the area where the active layer of the thin film transistor is to be formed;
making the mold to contact a gate insulating material spread on the substrate; and
forming a groove in the gate insulating material by applying pressure to the mold.
11. The method according to claim 9 , wherein the step of forming the active layer of the thin film transistor includes:
spreading the nanowire into the groove of the gate insulating film by use of an inkjet.
12. The method according to claim 11 , wherein the nanowire is dissolved in an alcohol system solvent, so as to be spread by the inkjet.
13. The method according to claim 9 , wherein the step of forming the active layer of the thin film transistor includes:
heat-treating end portions of the nanowire connected to the source electrode and the drain electrode.
14. The method according to claim 9 , further comprising:
forming a high molecular insulating film on the active layer of the thin film transistor, so as to fix the location of the nanowire in the groove of the gate insulating film.