Organic thin-film transistors
An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R 1 through R 5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (μ 0 ) of 10 −4 cm 2 /V·sec or greater.
1. An organic thin-film transistor having a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine having the chemical structure of Formula (I):
wherein R 1 through R 5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization;
and wherein the polyarylamine has a mobility (μ 0 ) of 10 −4 cm 2 /V·sec or greater.
2. The organic thin-film transistor of claim 1 , wherein the polyarylamine has the chemical structure of Formula (II):
wherein R 6 is independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization.
3. The organic thin-film transistor of claim 2 , wherein R 6 is alkyl.
4. The organic thin-film transistor of claim 2 , wherein A and B are phenylene.
5. The organic thin-film transistor of claim 4 , wherein A and B are phenylene and R 6 is alkyl.
6. The organic thin-film transistor of claim 2 , wherein R 6 is a fluorine-substituted alkyl or aryl.
7. The organic thin-film transistor of claim 2 , wherein n is from about 2 to about 5000.
8. The organic thin-film transistor of claim 1 , wherein n is from about 2 to about 5000.
9. The organic thin-film transistor of claim 1 , wherein A and B are phenylene.
10. The organic thin-film transistor of claim 1 , wherein at least one of R 1 through R 5 is a fluorine-substituted alkyl or aryl.
11. The organic thin-film transistor of claim 1 , wherein A and B are phenylene; R 1 , R 2 , R 4 , and R 5 are hydrogen; and R 3 is alkyl.
12. The organic thin-film transistor of claim 1 , wherein the semiconducting layer is from about 5 nm to about 1000 nm thick.
13. The organic thin-film transistor of claim 1 , further comprising a dielectric layer comprising an organic polymer film.
14. The organic thin-film transistor of claim 1 , further comprising at least one electrode made from a material selected from the group consisting of aluminum, gold, chromium, indium tin oxide, nickel, and platinum.
15. The organic thin-film transistor of claim 1 , further comprising at least one electrode made from a conductive polymer.
16. The organic thin-film transistor of claim 1 , wherein the transistor is a top-contact thin film transistor.
17. The organic thin-film transistor of claim 1 , wherein the transistor has an on/off ratio greater than about 10 3 .
18. The organic thin-film transistor of claim 17 , wherein the transistor has an on/off ratio from about 10 4 to about 10 5 .
19. An organic thin-film transistor, comprising:
a supporting substrate;
a gate electrode, a source electrode, and a drain electrode;
a dielectric layer; and
a p-type semiconducting layer;
wherein the semiconducting layer comprises a crystalline conjugated polyarylamine having the chemical structure of Formula (I):
wherein R 1 through R 5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization;
and wherein the polyarylamine has a mobility (μ 0 ) of 10 −4 cm 2 /V·sec or greater.
20. An organic thin-film transistor, comprising:
a supporting substrate;
a gate electrode, a source electrode, and a drain electrode;
a dielectric layer; and
a p-type semiconducting layer;
wherein the semiconducting layer comprises a crystalline conjugated polyarylamine having the chemical structure of Formula (II):
wherein R 6 is independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization;
and wherein the polyarylamine has a mobility (μ 0 ) of 10 −4 cm 2 /V·sec or greater.