Ion source using matrix-assisted laser desorption/ionization
View Patent ↗An ion source generating ions by matrix-assisted laser desorption/ionization (MALDI) comprising a MALDI sample support and a solid-state the laser system generating a pulsed laser beam, which has a wavelength in the range between 332 and 342 nanometers and is spatially shaped in the solid-state laser system such that the spatial intensity distribution of the laser beam on the MALDI sample support exhibits more than one intensity peak.
1. Ion source generating ions by matrix-assisted laser desorption/ionization (MALDI), comprising a MALDI sample support and a solid-state laser system generating a laser beam, which is temporally pulsed and has a wavelength in the range between 332 and 342 nanometers, wherein at least one optical or electro-optical component of the solid-state laser system spatially shapes the laser beam such that the spatial intensity distribution of the laser beam on the MALDI sample support exhibits more than one intensity peak.
2. Ion source according to claim 1 , wherein the solid-state laser system comprises a crystal doped with ions or a glass doped with ions as laser medium.
3. Ion source according to claim 1 , wherein the solid-state laser system comprises a semiconductor laser diode with one single emitter or a plurality of single emitters.
4. Ion source according to claim 1 , wherein the laser beam emitted by the laser medium has a wavelength in the range between 664 and 684 nanometers.
5. Ion source according to claim 4 , wherein the solid-state laser system comprises a semiconductor laser diode and the laser medium consists of alternate layers of gallium indium phosphide (Ga)(InP) and aluminum gallium indium phosphide (AlGa)(InP) emitting a laser beam at a wavelength of 674 nanometers.
6. Ion source according to claim 1 , wherein the laser beam emitted by the laser medium has a wavelength in the range between 996 and 1026 nanometers.
7. Ion source according to claim 6 , wherein the solid-state laser system comprises a semiconductor laser diode and the laser medium consists of alternate layers of gallium indium arsenide (GaIn)(As) and gallium arsenide (Ga)(As) emitting a laser beam at a wavelength of 1011 nanometers.
8. Ion source according to claim 1 , wherein the laser beam emitted by the laser medium has a wavelength in the range between 1328 and 1368 nanometers.
9. Ion source according to claim 8 , wherein the laser medium is a YAlO 3 crystal doped with neodymium ions emitting a laser beam at a wavelength of 1341 nanometers.
10. Ion source according to claim 8 , wherein the laser medium is a YVO 4 crystal doped with neodymium ions emitting a laser beam at a wavelength of 1342 nanometers.
11. Ion source according to one of the claim 4 , wherein the wavelength of the laser beam emitted by the laser medium is converted into a wavelength in the range between 332 and 342 nanometers by generating higher order harmonics in nonlinear crystals.
12. Ion source according to claim 1 , wherein the at least one optical or electro-optical component is adjustable to create different spatial intensity distributions of the laser beam on the MALDI sample support.