Siloxane-polymer dielectric compositions and related organic field-effect transistors
View Patent ↗Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.
1. A dielectric composition comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol), a copolymer of a poly(vinylalcohol), and combinations thereof; and a bis(silyl)alkyl component of the formula (X) 3-m (Y) m Si(Z)Si(Y′) m′ (X′) 3-m′ , wherein Z is a moiety selected from (CH 2 ) n , a divalent branched alkyl group, and a divalent substituted alkyl group; n ranges from 1 to 20; X and X′ are independently selected from halide, amino, alkoxy and carboxylate groups, and combinations thereof; Y and Y′ are independently selected from H and alkyl; and m and m′ independently range from 0 to 2.
2. The composition of claim 1 where n ranges from 3 to 14.
3. The composition of claim 1 wherein X and X′ are independently selected from chloride, acetoxy and combinations thereof.
4. The composition of claim 1 comprising metal oxide particles, said particles comprising a metal component selected from a Group III metal, Group IV metal and a transition metal, and combinations thereof.
5. The composition of claim 1 , wherein Z is a moiety selected from (CH 2 ) 6 and (CH 2 ) 12 .
6. The composition of claim 1 , wherein Z is (CF 2 ) n , wherein n is as defined in claim 1 .
7. A method of preparing the dielectric composition of claim 1 , the method comprising contacting the polymeric component and the bis(silyl)alkyl component to provide the condensation product.
8. The method of claim 7 , comprising mixing the polymeric component and the bis(silyl)alkyl component with metal oxide particles, wherein the metal oxide particles comprise a metal component selected from a Group III metal, a Group IV metal, a transition metal, and combinations thereof.
9. A method of using the dielectric composition of claim 1 , the method comprising depositing the dielectric composition to provide a dielectric component.
10. The method of claim 9 , wherein depositing the dielectric composition comprises spin-coating, solution-casting, or printing.
11. A dielectric composition comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol) and a copolymer of a poly(vinylalcohol) and combinations thereof and a bis(silylated) component of the formula (X) 3-m (Y) m Si(Z)Si(Y′) m′ (X′) 3-m′ , wherein Z is a moiety selected from O, (CH 2 ) n , a divalent branched alkyl group, and a divalent substituted alkyl group; n ranges from 1 to 20; X and X′ are independently selected from halide and amino groups, and combinations thereof; Y and Y′ are independently selected from H and alkyl; and m and m′ independently range from 0 to 2.
12. A dielectric film comprising the condensation product of a polymeric component selected from a poly(vinylphenol), a copolymer of a poly(vinylphenol), a poly(vinylalcohol), a copolyrner of a poly(vinylalcohol), and combinations thereof; and a bis(silylated) component of the formula (X) 3-m (Y) m Si(Z)Si(Y′) m′ (X′) 3-m′ , wherein Z is a moiety selected from O, (CH 2 ) n , a divalent branched alkyl group, and a divalent substituted alkyl group; n ranges from 1 to 20; X and X′ are independently selected from halide, amino, alkoxy and carboxylate groups, and combinations thereof Y and Y′ are independently selected from H and alkyl; and m and m′ independently range from 0 to 2;
wherein the dielectric film has a thickness between about 10 nm and about 30 nm, and exhibits a capacitance of at least about 150 nF cm −2 .
13. A composite comprising a dielectric component comprising the composition of claim 1 and a semiconductor component comprising a compound selected from an n-type semiconductor material and a p-type semiconductor material.
14. The composite of claim 13 , wherein the dielectric component has a thickness from about 10 nm to about 1 micron.
15. The composite of claim 13 , wherein the dielectric component has a thickness dimension less than about 20 nm.
16. The composite of claim 13 , wherein the semiconductor component comprises a compound selected from a fused heterocycle, a fused aromatic compound, and combinations thereof.
17. The composite of claim 13 , wherein the semiconductor component comprises a compound selected from a polythiophene, a pentacene, and a phthalocyanine.
18. The composite of claim 13 , wherein the composite is on a substrate.
19. The composite of claim 18 , wherein the substrate is flexible.
20. The composite of claim 18 , wherein the substrate comprises a gate component of a transistor device, the transistor device comprising source and drain electrodes.
21. The composite of claim 20 , wherein the transistor device is a field-effect transistor.
22. The composite of claim 20 , wherein the transistor device is an organic thin-film transistor.
23. The composite of claim 20 , wherein the transistor device is a complementary logic device.
24. The composite of claim 23 , wherein the complementary logic device is an inverter.