Solid-state imaging device and method for manufacturing the same

1. A method for manufacturing a solid-state imaging device including a semiconductor substrate with a photodetector portion, the photodetector portion including a p-type first impurity region formed in the semiconductor substrate and an n-type second impurity region formed below the first impurity region, the method comprising the steps of:

(a) forming the n-type second impurity region by introducing an n-type impurity into the semiconductor substrate,

(b) forming the p-type first impurity region by introducing indium into the semiconductor substrate,

(c) forming an antireflection film from a silicon nitride film above the photodetector portion; and

(d) performing ion implantation of indium in the antireflection film,

wherein in the step (b), boron is ion-implanted after the indium is ion-implanted.

2. The method for manufacturing a solid-state imaging device according to claim 1 ,

wherein the semiconductor substrate is a silicon substrate, and

in the step (b), the indium is introduced by ion implantation at a dose of not less than 5×10 13 (ions/cm 2 ).

3. The method for manufacturing a solid-state imaging device according to claim 1 , wherein the step (b) is followed by a step of subjecting the semiconductor substrate to a heat treatment under a condition of 450° C. to 550° C.

4. The method for manufacturing a solid-state imaging device according to claim 1 ,

wherein in the step (b), boron is introduced further, and the indium and the boron are introduced by ion implantation.

5. The method for manufacturing a solid-state imaging device according to claim 4 ,

wherein the step (b) is performed so that a ratio (N1/N) of an amount N1 of the indium to a total amount N of the indium and the boron is not less than 0.4 and not more than 0.6.

6. A solid-state imaging device comprising a semiconductor substrate with a photodetector portion, the photodetector portion including a p-type first impurity region formed in the semiconductor substrate and an n-type second impurity region formed below the first impurity region and an antireflection film formed above the photodetector portion,

wherein the first impurity region contains indium as an impurity and the antireflection film comprises a silicon nitride film and contains indium as an impurity, and

wherein the first impurity region contains boron as an impurity.

7. The solid-state imaging device according to claim 6 ,

wherein a ratio (N1/N) of an amount N1 of the indium to a total amount N of the indium and the boron is not less than 0.4 and not more than 0.6.