TFT array panel and fabricating method thereof
Disclosed is display part such as a TFT array panel comprising an aluminum layer, and a molybdenum layer formed on the aluminum layer. The thickness of the molybdenum layer may be about 10% to about 40% the thickness of the aluminum layer. As a result, a top surface of the aluminum layer may have a width about equal to a bottom surface of the molybdenum layer. Accordingly, it is an aspect of the present invention to provide a TFT array panel comprising an aluminum wiring on which aluminum protrusion is reduced or eliminated.
1 . A TFT array panel comprising:
an aluminum layer having a thickness; and
a top molybdenum layer formed on the aluminum layer, the top molybdenum thickness having a thickness in the range from about 10% to about 40% the thickness of the aluminum layer.
2 . The TFT array panel according to claim 1 , wherein the aluminum layer and the top molybdenum layer are in direct contact with each other.
3 . The TFT array panel according to claim 1 , wherein the thickness of the top molybdenum layer is in the range of about 20% to 27% of the thickness of the aluminum layer.
4 . The TFT array panel according to claim 1 , wherein the top molybdenum layer comprises at least one selected from a group consisting of tungsten (W), zirconium (Zr), tantalum (Ta), niobium (Nb), and nitrogen (N).
5 . The TFT array panel according to claim 1 , further comprising a bottom molybdenum layer formed adjacent a bottom of the aluminum layer.
6 . A TFT array panel comprising:
a gate wiring; and
a data wiring, wherein at least one of the gate and data wiring comprises an aluminum layer having an aluminum layer thickness and a molybdenum layer having a molybdenum thickness about 10% to 40% of the aluminum layer thickness, and wherein the aluminum layer and the molybdenum layer are formed in sequence.
7 . A method of fabricating a TFT array panel, comprising:
depositing an aluminum layer having a first thickness on a substrate;
depositing a molybdenum layer on the aluminum layer, the molybdenum layer having a second thicknes about 10% to about 40% the first thickness; and
forming a wiring by patterning the aluminum layer and the molybdenum layer.
8 . The method according to claim 7 , further comprising forming an insulating layer, a semiconductor layer and an ohmic contact layer in sequence on the wiring.
9 . The method according to claim 8 , wherein forming an insulting layer, a semiconductor layer, and an ohmic contact layer in sequence comprises forming at least one of the insulating layer, the semiconductor layer, and the ohmic contact layer using a plasma-enhanced chemical vapor deposition process.
10 . A liquid crystal display comprising:
a first substrate comprising a gate wiring and a data wiring, at least one of the gate wiring and the data wiring comprising an aluminum layer having a first thickness and a molybdenum layer having a second thickness in the range from about 10% to about 40% of the first thickness, the aluminum layer and the molybdenum layer formed in sequence;
a second substrate facing the first substrate; and
a liquid crystal layer placed between the first substrate and the second substrate.
11 . The liquid crystal display of claim 10 , wherein the aluminum layer and the molybdenum layer each extend along a first direction, and each comprise a top surface, a bottom surface, a first lateral side surface having a first angle with respect to the bottom surface of the aluminum layer, and a second lateral side surface having a second angle with respect to the bottom surface of the aluminum layer, and wherein a width of the bottom surface of the molybdenum layer perpendicular to the first direction is substantially the same as a width of the top surface of the aluminum layer perpendicular to the first direction.
12 . The liquid crystal display of claim 10 , wherein the first angle of the aluminum layer is substantially the same as the first angle of the molybdenum layer.
13 . A display part, comprising:
a substrate;
a wiring on the substrate, the wiring configured to transmit one or more electrical signals in the display part, wherein the wiring comprises:
an aluminum layer;
a molybdenum layer adjacent the aluminum layer, wherein the aluminum layer and the molybdenum layer each extend along a first direction, and each comprise a top surface, a bottom surface, a first lateral side surface having a first angle with respect to the bottom surface of the aluminum layer, and a second lateral side surface having a second angle with respect to the bottom surface of the aluminum layer, and wherein a width of the bottom surface of the molybdenum layer perpendicular to the first direction is substantially the same as a width of the top surface of the aluminum layer perpendicular to the first direction.
14 . The part of claim 13 , wherein the first angle of the aluminum layer is substantially the same as the first angle of the molybdenum layer.
15 . The part of claim 14 , wherein the first angle is different than ninety degrees.
16 . The part of claim 13 , wherein the display part comprises at least one of a liquid crystal display part and an organic light emitting diode display part.
17 . The part of claim 13 , further comprising a bottom layer extending along the first direction, the bottom layer having a top surface adjacent the bottom surface of the aluminum layer.
18 . The part of claim 13 , wherein the molybdenum layer further comprises at least one of tungsten (W), zirconium (Zr), tantalum (Ta), niobium (Nb), and nitrogen (N).
19 . The part of claim 13 , wherein the aluminum layer has a first thickness, and wherein the molybdenum layer has a thickness between about 10% and about 40% of the first thickness.
20 . The part of claim 19 , wherein the thickness of the molybdenum layer is selected to substantially eliminate aluminum hillock formation.