Thin-film transistor
View Patent ↗There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.
1. A bottom-gate thin film transistor comprising:
a substrate;
a single gate electrode;
a polyacrylate dielectric layer;
a polythiophene semiconductor layer;
a performance-enhancing top layer comprising a polysilsesquioxane polymer;
a source electrode; and
a drain electrode;
wherein the performance-enhancing top layer contacts the semiconductor layer and the semiconductor layer is between the dielectric layer and the performance-enhancing top layer;
wherein the performance-enhancing top layer covers the semiconductor layer, the source electrode, and the drain electrode; and
wherein the performance-enhancing top layer increases the mobility and the current on/off ratio of the transistor.
2. The thin film transistor of claim 1 , wherein the polymer is poly(methyl silsesquioxane).
3. The thin film transistor of claim 2 , wherein the performance-enhancing top layer further comprises inorganic particles.
4. The thin film transistor of claim 1 , wherein the source and drain electrodes are not in contact with the performance-enhancing top layer.