Method for etching and for forming a contact hole using thereof

1. A method for etching at least including:

a process for forming an organic mask having a first opening portion in which a first etching structure is formed and a second opening portion in which a second etching structure provided with a upper etching structure is formed, by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing,

wherein a part of the organic mask runs and sags along a side wall of the first etching structure in a way that the organic mask fills the side wall and at least a bottom of the first etching structure while leaving a portion unfilled in the upper etching structure.

2. A method for etching according to claim 1 , wherein the part of the organic mask runs and sags in a way that the organic mask reaches a vicinity area of the upper end of the upper etching structure, leaving an inside of the upper etching structure unfilled.

3. A method for etching according to claim 1 , wherein the method, after forming the transformed organic mask in accordance with the first etching structure and the upper etching structure in the second etching structure, further includes a process for selectively etching the constituent part to be etched to a depth of a second final target level which is deeper than a first final target level without any etching damages to a bottom of the first etching structure while using the transformed organic mask, thereby forming a lower etching structure provided just below the upper etching structure in the second etching structure,

the first etching structure having the first final target level of depth, and

the upper etching structure and the lower etching structure defining the second etching structure having the second final target level of depth.

4. A method for etching according to claim 1 , wherein the method, after forming the transformed organic mask in accordance with the first etching structure and the upper etching structure in the second etching structure, further includes a process for selectively etching the constituent part to be etched to a depth of a second final target level which is deeper than a first final target level without any etching damages to a bottom of the first etching structure while using the transformed organic mask, thereby forming a lower etching structure provided just below the upper etching structure in the second etching structure and with a horizontal dimension smaller than that of the upper etching structure,

the first etching structure having the first final target level of depth, and

the upper etching structure and lower etching structure defining the second etching structure having the second final target level of depth and with forward tapered in a staircase pattern.

5. A method for

etching according to claim 1 , wherein the etching forms a contact hole.

6. A method for etching according to claim 1 , wherein the organic film is formed with at least thickness of the film being formed so as to have a plurality of stages.

7. A method for

etching according to claim 6 , wherein the etching forms a contact hole.

8. A method for etching according to claim 1 , wherein the organic film formed with a plurality of stages in the film thickness has a film thickness area in a vicinity of at least one of the first opening portion and the second opening portion, thinner than other areas.

9. A method for

etching according to claim 8 , wherein the etching forms a contact hole.

10. A method for etching according to claim 1 , wherein the process for forming the organic mask further forms a first opening portion and a second opening portion having a diameter larger than that of the first opening portion.

11. A method for

etching according to claim 10 , wherein the etching forms a contact hole.

12. A method for etching according to claim 1 , wherein the transformed organic mask fills one of the first opening portion or the second opening portion, and leaves the other unfilled.

13. A method for

etching according to claim 12 , wherein the etching forms a contact hole.

14. A method for etching according to claim 1 , wherein the method includes a process for etching the constituent part to be etched using the organic mask which becomes the transformed organic mask successively, and a process for selectively etching the constituent part to be etched just beneath of the first opening portion and the second opening portion.

15. A method for etching according to claim 14 , wherein the selectively etching is an optionality of the first opening portion and the second opening portion.

16. A method for

etching according to claim 15 , wherein the etching forms a contact hole.

17. A method for etching according to claim 14 , wherein the selectively etching is based on a difference of etching amount in the first opening portion and the second opening portion.

18. A method for

etching according to claim 17 , wherein the etching forms a contact hole.

19. A method for etching according to claim 14 , wherein the selectively etching is based on a difference of etching depth in the first opening portion and the second opening portion.

20. A method for

etching according to claim 19 , wherein the etching forms a contact hole.

21. A method for etching according to claim 14 , wherein the selectively etching is based on a difference of etching damage in the first opening portion and the second opening portion.

22. A method for

etching according to 21 , wherein the etching forms a contact hole.

23. A method for etching according to claim 14 , wherein the first opening portion and the second opening portion are different in planar dimensions.

24. A method for

etching according to claim 23 , wherein the etching forms a contact hole.

25. A method for

etching according to claim 14 , wherein the etching forms a contact hole.

26. A method for

etching according to claim 3 , wherein the etching forms a contact hole.

27. A method for etching which includes: a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent, reflowing and at least filling a bottom of the first etching structure with a part of reflown organic mask while leaving a upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, provided with the upper etching structure and a lower etching structure, by forming the lower etching structure lying just below the upper etching structure while selectively etching the constituent part to be etched to a depth of the second final target level which is deeper than that of the first final target level without any etching damages to the bottom of the first etching structure using the transformed organic mask.

28. A method for etching according to claim 27 , wherein the method includes a process for forming a transformed organic mask through reflow in dissolving in which the reflow in dissolving fills at least the bottom of the first etching structure while leaving the upper etching structure unfilled.

29. A method for etching which includes:

a process for forming an organic mask having a first opening portion and a second opening portion having a dimension larger than that of the first opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure and along a side wall of a upper etching structure of the second etching structure, so that the re-flown organic mask fills both of the side walls and at least a bottom of the first etching structure while leaving a bottom of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth and with forward tapered in a staircase pattern, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure and having a horizontal dimension smaller than that of the upper etching structure in the second etching structure, while selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

30. A method for etching according to claim 29 , wherein the horizontal dimension of the lower etching structure in the second etching structure is smaller than that of the upper etching structure, by the quantity corresponding to approximately two times of the thickness formed in the horizontal direction of the transformed organic mask after reflow in dissolving runs and sags along the side wall of the upper etching structure.

31. A method for etching which includes:

a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

32. A method for etching according to claim 31 , wherein the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

33. A method for etching which includes:

a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

34. A method for etching according to claim 33 , wherein the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

35. A method for etching which includes:

a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for removing only a portion with thinner film thickness in the vicinity of the second opening portion,a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of only the first etching structure, so that the reflown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, though the re-flown organic mask reaches a vicinity area of the upper end of the upper etching structure, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

36. A method for etching according to claim 35 , wherein the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

37. A method for forming a contact hole which includes:

a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent, reflowing and at least filling a bottom of the first etching structure with a part of re-flown organic mask while leaving a upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, provided with the upper etching structure and a lower etching structure, by forming the lower etching structure lying just below the upper etching structure while selectively etching the constituent part to be etched to a depth of the second final target level which is deeper than that of the first final target level without any etching damages to the bottom of the first etching structure using the transformed organic mask.

38. A method for forming a contact hole according to claim 37 , wherein the method includes a process that reflow in dissolving fills at least the bottom of the first etching structure while leaving the upper etching structure unfilled.

39. A method for forming a contact hole which includes:

a process for forming an organic mask having a first opening portion and a second opening portion having a dimension larger than that of the first opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask, a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure and along a side wall of a upper etching structure of the second etching structure, so that the reflown organic mask fills both of the side walls and at least a bottom of the first etching structure while leaving a bottom of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth and with forward tapered in a staircase pattern, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure and having a horizontal dimension smaller than that of the upper etching structure in the second etching structure, while selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

40. A method for forming a contact hole according to claim 39 , wherein the horizontal dimension of the lower etching structure in the second etching structure is smaller than that of the upper etching structure, by the quantity corresponding to approximately two times of the thickness formed in the horizontal direction of the transformed organic mask after reflow in dissolving runs and sags along the side wall of the upper etching structure.

41. A method for forming a contact hole which includes:

a process for forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

42. A method for forming a contact hole according to claim 41 , wherein the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

43. A method for forming a contact hole which includes:

a process for forming an organic mask having first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

44. A method for forming a contact hole according to claim 43 , wherein

the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

45. A method for forming a contact hole which includes:

a process for forming an organic mask having a first opening portion and a second opening portion, and having a thickness in the vicinity of the second opening portion thinner than other portions by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a first etching structure with a first final target level of depth and is located below the first opening portion, and for forming a upper etching structure with a depth equal or similar to the first final target level of depth and is located below the second opening portion, by selectively etching the constituent part to be etched using the organic mask,

a process for removing only a portion with thinner film thickness in the vicinity of the second opening portion,

a process for forming a transformed organic mask in a way that by dissolving the organic mask in contact with organic solvent and reflowing, a part of the organic mask is running and sagging along a side wall of only the first etching structure, so that the re-flown organic mask fills the side wall of the first etching structure and at least a bottom thereof while leaving inside of the upper etching structure unfilled, though the re flown organic mask reaches a vicinity area of the upper end of the upper etching structure, and

a process for forming the first etching structure with the first final target level of depth and a second etching structure with a second final target level of depth, the second etching structure providing with the upper etching structure and a lower etching structure lying just below the upper etching structure in the second etching structure, by selectively etching the constituent part to be etched to the depth of the second final target level which is deeper than that of the first final target level, without any etching damages to the bottom of the first etching structure using the transformed organic mask.

46. A method for forming a contact hole according to claim 45 , wherein the method includes a process for forming an unfilled transformed organic mask inside the upper etching structure through reflow in dissolving while filling the side wall of the first etching structure and at least the bottom thereof.

47. A method for etching at least including:

a process for forming an organic mask having a first opening portion in which a first etching structure is formed and a second opening portion in which a second etching structure provided with a upper etching structure is formed, by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing, wherein a part of the organic mask runs and sags along a side wall of the first etching structure and along a side wall of the upper etching structure of the second etching structure in a way that the organic mask fills both of the side wall and at least a bottom of the first etching structure, while leaving a bottom of the upper etching structure unfilled.

48. A method for etching according to claim 47 , wherein the etching forms a contact hole.

49. A method for etching at least including:

a process for forming an organic mask having a first opening portion in which a first etching structure is formed and a second opening portion in which a second etching structure provided with a upper etching structure is formed, by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing, wherein a part of the organic mask runs and sags along a side wall of only the first etching structure in a way that the organic mask fills the side wall and at least a bottom of the first etching structure while the organic mask reaches a vicinity area of the upper end of the upper etching structure, leaving inside the upper etching structure unfilled.

50. A method for etching according to claim 49 wherein the etching forms a contact hole.

51. A method for etching at least including:

a process for forming an organic mask having a first opening portion in which a first etching structure is formed and a second opening portion in which a second etching structure provided with a upper etching structure is formed, by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched,

a process for forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing, and

a process for selectively etching the constituent part to be etched after the forming of the transformed organic mask to a depth of a second final target level which is deeper than a first final target level without any etching damages to a bottom of the first etching structure while using the transformed organic mask, thereby forming a lower etching structure provided just below the upper etching structure in the second etching structure and with a horizontal dimension smaller than that of the upper etching structure,

the first etching structure having the first final target level of depth, and

the upper etching structure and lower etching structure defining the second etching structure having the second final target level of depth and with forward tapered in a staircase pattern.

52. A method for etching, according to claim 51 wherein the etching forms a contact hole.