Semiconductor pressure sensor
View Patent ↗A semiconductor pressure sensor is intended to achieve reduction in size and cost by decreasing the number of terminals and the number of pads. In the semiconductor pressure sensor, in a first mode in which correction data is input to a memory, a voltage input change-over switch and an input/output change-over switch are operated by an input signal from a switch change-over terminal in such a manner that a voltage input terminal and an input/output terminal are connected to a digital circuit, whereas in a second mode in which an electric signal corrected and amplified is output, the voltage input change-over switch is connected to a semiconductor sensor chip by means of an input signal from the switch change-over terminal, and the input/output terminal is connected to a correction and amplification circuit.
1. A semiconductor pressure sensor comprising:
a semiconductor sensor part for detecting pressure;
an adjustment and control part including a digital circuit with a memory for storing correction data which is used to correct an electric signal from said semiconductor sensor part, and a correction and amplification circuit that corrects and amplifies said electric signal;
an input/output terminal that is connected to an input/output pad mounted on said adjustment and control part for inputting data to said memory and outputting said electric signal corrected and amplified;
a voltage input terminal that is connected to a voltage input pad mounted on said adjustment and control part for impressing a voltage to said memory and inputting a voltage as an operating power supply for said semiconductor sensor part;
a switch change-over terminal that is connected to a switch change-over pad mounted on said adjustment and control part;
a voltage input change-over switch that is connected to said switch change-over pad and said voltage input pad; and
an input/output change-over switch that is connected to said switch change-over pad and said input/output pad;
wherein in a first mode in which said correction data is input to said memory, said voltage input change-over switch and said input/output change-over switch are operated by an input signal from said switch change-over terminal in such a manner that said voltage input terminal and said input/output terminal are connected to said digital circuit; and
in a second mode in which said electric signal corrected and amplified is output, by means of an input signal from said switch change-over terminal, said voltage input change-over switch is connected to said semiconductor sensor part and said input/output terminal is connected to said correction and amplification circuit.
2. The semiconductor pressure sensor as set forth in claim 1 , further comprising:
a clock signal generation circuit that is arranged outside of said adjustment and control part for generating a clock signal which serves as a reference signal for the timing in which data is written into said memory;
a timing signal generation circuit that is arranged outside of said adjustment and control part for generating an input/output timing signal which serves as a trigger signal for the reading and writing of said correction data;
a clock change-over switch that is arranged in said adjustment and control part and is connected to said clock signal generation circuit; and
a timing change-over switch that is arranged in said adjustment and control part and is connected to said timing signal generation circuit;
wherein in said first mode in which said correction data is input to said memory, said clock change-over switch and said timing change-over switch are operated in such a manner that said clock signal generation circuit and said timing signal generation circuit are electrically connected to said digital circuit, respectively; and
in said second mode in which said electric signal corrected and amplified is output, said clock change-over switch and said timing change-over switch are operated in such a manner that said semiconductor sensor part is connected to said correction and amplification circuit.
3. The semiconductor pressure sensor as set forth in claim 1 , wherein said semiconductor sensor part is composed of a semiconductor sensor chip, and said adjustment and control part is composed of a semiconductor adjustment chip.
4. The semiconductor pressure sensor as set forth in claim 1 , wherein said semiconductor sensor part and said adjustment and control part are composed of an IC that is formed on one and the same chip.
5. A semiconductor pressure sensor comprising:
a semiconductor sensor part for detecting pressure;
an adjustment and control part including a digital circuit with a memory for storing correction data which is used to correct an electric signal from said semiconductor sensor part, and a correction and amplification circuit that corrects and amplifies said electric signal;
a clock signal generation circuit that is arranged outside of said adjustment and control part for generating a clock signal which serves as a reference signal for the timing in which data is written into said memory;
a timing signal generation circuit that is arranged outside of said adjustment and control part for generating an input/output timing signal which serves as a trigger signal for the reading and writing of said correction data;
a clock change-over switch that is arranged in said adjustment and control part and is connected to said clock signal generation circuit; and
a timing change-over switch that is arranged in said adjustment and control part and is connected to said timing signal generation circuit;
wherein in said first mode in which said correction data is input to said memory, said clock change-over switch and said timing change-over switch are operated in such a manner that said clock signal generation circuit and said timing signal generation circuit are electrically connected to said digital circuit, respectively; and
in said second mode in which said electric signal corrected and amplified is output, said clock change-over switch and said timing change-over switch are operated in such a manner that said semiconductor sensor part is connected to said correction and amplification circuit.