Transflective type liquid crystal display device and method of fabricating the same

1. A transflective type liquid crystal display (LCD) device comprising:

a plurality of gate lines and a plurality of data lines formed on a first substrate to define at least one pixel region having a reflection area and a transmission area;

a thin film transistor formed on a crossing point of the plurality of gate lines and the plurality of data lines;

a passivation layer formed on the first substrate including the thin film transistor, and having a contact hole;

a pixel electrode formed at an overall area of the pixel region on the passivation layer and electrically connected with the thin film transistor through the passivation layer;

a dielectric layer contacting a portion of a top surface of the pixel electrode in the reflection area of the pixel region and around the contact hole and having a dielectric constant of about 2-5;

a reflection plate contacting an overall area of the dielectric layer;

a common electrode on an entire area of a second substrate that faces with the first substrate; and

a liquid crystal layer between the first substrate and the second substrate,

wherein an entire bottom surface of the pixel electrode directly contacts a flat top surface of the passivation layer, an inner surface of the contact hole and the thin film transistor in the contact hole,

wherein the dielectric layer comprises an organic insulator and is disposed between the reflection layer and the pixel electrode to form a capacitance which causes a voltage supplied to the pixel electrode to be dropped,

wherein the dielectric layer has a top surface, the top surface including a plurality of protrusions protruding from the top surface and a plurality of flat surfaces between the protrusions, and

wherein a first distance between the pixel electrode of the first substrate and the common electrode of the second substrate in the transmission area is substantially identical to a second distance between the reflection plate of the first substrate and the common electrode of the second substrate in the reflection area.

2. The transflective type LCD device according to claim 1 , further comprising:

red, green and blue color filter layers formed on the second substrate facing the first substrate;

a black matrix formed between the red, green and blue color filter layers; and

an over coat layer formed on each of the red, green and blue color filter layers.

3. The transflective type LCD device according to claim 1 , wherein the transmission area is formed at a center area of the pixel region and the reflection area is formed to enclose the pixel region.

4. The transflective type LCD device according to claim 1 , wherein the reflection area has a liquid crystal retardation value corresponding to about one-half of a liquid crystal retardation value of the transmission area by the voltage drop.

5. The transflective type LCD device according to claim 1 , wherein the dielectric layer is formed of one of photo acryl and benzocyclobutene(BCB).

6. A method of fabricating a transflective liquid crystal display (LCD) device, the method comprising:

forming a gate electrode and a gate line on a first substrate;

forming a gate insulating layer on the first substrate including the gate line;

forming a semiconductor layer on the gate insulating layer corresponding to the gate electrode;

forming source and drain electrodes on the semiconductor layer;

forming a data line crossing the gate line and defining a pixel region including a reflection area and a transmission area on the semiconductor layer;

forming a passivation layer on the first substrate including the data line, the passivation layer having a contact hole;

forming a pixel electrode electrically coupled to the drain electrode on the passivation layer through the passivation layer, the pixel electrode being formed at an overall area of the pixel region on the passivation layer;

forming a dielectric layer contacting a portion of a top surface of the pixel electrode in the reflection area of the pixel region and around the contact hole, the dielectric layer having a dielectric constant of about 2-5;

forming a reflection plate contacting an overall area of the dielectric layer;

forming a common electrode on an entire area of a second substrate that faces with the first substrate; and

forming a liquid crystal layer between the first substrate and the second substrate,

wherein an entire bottom surface of the pixel electrode directly contacts a flat top surface of the passivation layer, an inner surface of the contact hole and a thin film transistor in the contact hole,

wherein the dielectric layer comprises an organic insulator and is disposed between the reflection layer and the pixel electrode to form a capacitance which causes a voltage supplied to the pixel electrode to be dropped,

wherein the dielectric layer has a top surface, the top surface including a plurality of protrusions protruding from the top surface and a plurality of flat surfaces between the protrusions, and

wherein a first distance between the pixel electrode of the first substrate and the common electrode of the second substrate in the transmission area is substantially identical to a second distance between the reflection plate of the first substrate and the common electrode of the second substrate in the reflection area.

7. The method according to claim 6 , further comprising:

forming red, green and blue color filter layers on the second substrate facing the first substrate;

forming a black matrix between the red, green and blue color filter layers; and

forming an over coat layer on the red, green and blue color filter layers.

8. The method according to claim 6 , wherein the dielectric layer is formed by a photolithography process.

9. The method according to claim 6 , wherein the passivation layer is formed of one of photo acryl and benzocyclobutene (BCB).

10. A transflective type liquid crystal display (LCD) device comprising:

a plurality of gate lines and a plurality of data lines formed on a first substrate to define at least one pixel region having a reflection area and a transmission area;

a thin film transistor formed on a crossing point of the plurality of gate lines and the plurality of data lines;

a passivation layer formed on the first substrate including the thin film transistor;

a pixel electrode formed at an overall area of the pixel region on the passivation layer and electrically connected with the thin film transistor through the passivation layer;

a dielectric layer contacting a portion of a top surface of the pixel electrode in the reflection area of the pixel region and around a contact hole and having a dielectric constant;

a reflection plate contacting an overall area of the dielectric layer;

a common electrode on a second substrate that faces with the first substrate; and

a liquid crystal layer between the first substrate and the second substrate,

wherein the dielectric layer comprises an organic insulator and is disposed between the reflection layer and the pixel electrode to form a capacitance which causes a voltage supplied to the pixel electrode to be dropped,

wherein a first distance between the pixel electrode of the first substrate and the common electrode of the second substrate in the transmission area is substantially identical to a second distance between the reflection plate of the first substrate and the common electrode of the second substrate in the reflection area, and

wherein the dielectric layer has a top surface, the top surface including a plurality of protrusions protruding from the top surface and a plurality of flat surfaces between the protrusions.