Avalanche photodiode
View Patent ↗An avalanche photodiode includes at least one crystal layer having a larger band-gap than that of an absorption layer formed by a composition or material different from that of the absorption layer formed on a junction interface between a compound semiconductor absorbing an optical signal and an Si multiplication layer, and the crystal layer may be intentionally doped with n or p type impurities to cancel electrical influences of the impurities containing oxides present on the junction interface of compound semiconductor and surface of Si.
1. A method of manufacturing an avalanche photodiode, comprising the steps of:
(a) forming a silicon multiplication layer over a silicon substrate and providing a multiplication portion exposed on said multiplication layer;
(b) forming an optical absorption layer composed of a compound semiconductor over said silicon substrate and providing an absorption portion forming a semiconductor interface layer over said optical absorption layer, wherein a band-gap of said interface layer is wider than that of said optical absorption layer, a band-gap of said optical absorption layer is narrower than that of said multiplication layer, and a p-type or n-type impurity is doped in said interface layer; and
(c) fusing said multiplication layer to said multiplication portion such that the exposed multiplication layer is firmly fixed to said semiconductor interface layer.
2. The method according to claim 1 , wherein said optical absorption layer is formed of an InGaAs mixed crystal or InGaAlAs mixed crystal or InGaAsP mixed crystal, and said semiconductor interface layer is formed of said InGaAlAs mixed crystal or InGaAsP mixed crystal.
3. The method according to claim 1 , wherein said optical absorption layer is formed of an InGaAs mixed crystal or InGaAlAs mixed crystal or InGaAsP mixed crystal, and said semiconductor interface layer is formed of InP or GaAs.
4. The method according to claim 1 , wherein said optical absorption layer is formed of a semiconductor containing Sb.
5. The method according to claim 1 , wherein a junction between said silicon multiplication layer and said semiconductor interface layer is formed by the fusion.