Organic electroluminescence display panel and method for sealing the same
An organic EL display panel has a multi-layered structure in which a first electrode and a second electrode are formed on a transparent panel and an organic EL layer is formed between the first and second electrodes. A method for sealing the organic EL display panel includes the steps of forming a buffer layer of an organic matter such as silicon oxide and silicon nitride on the transparent panel, and locating a shield cover on the buffer layer. Thus, adhesive strength between the panel and an adhesive is enhanced to prevent external humidity and oxygen from being permeated into the panel, thereby increasing life span of the display.
1. An EL device comprising:
an insulating panel;
electrodes formed on the insulating panel;
a shield cover located in a spaced apart relation from the insulating panel and the electrodes;
a non-conductive buffer layer formed on at least a portion of the electrodes and the insulating panel in a surrounding region of the shield cover; and
an adhesive layer located between the buffer layer and the shield cover to attachment between the insulating panel and the shield cover.
2. The EL device as claimed in claim 1 , wherein the EL device is a television, computer, monitor or graphic display.
3. The EL device as claimed in claim 1 , wherein the material of the buffer is either silicon oxide or silicon nitride.
4. The EL device as claimed in claim 1 , wherein the buffer layer increases the adhesive strength between the insulating panel and the shield cover, and prevents from permeating external humidity or oxygen.
5. The EL device as claimed in claim 1 , wherein the buffer layer has an uneven or discontinuous surface.
6. The EL device as claimed in claim 1 , wherein the buffer layer has a thickness of about 0.1–5 μm.
7. The EL device as claimed in claim 1 , wherein the electrodes are contact pads for connecting with an external power source.
8. The EL device as claimed in claim 1 , wherein the electrodes are anode lines or cathode lines.
9. The EL device as claimed in claim 1 , wherein the electrodes are gate lines, source lines or drain lines.
10. An EL device comprising:
an insulating panel;
electrodes formed on the insulating panel;
a shield cover located in a spaced apart relation from the insulating panel and the electrodes;
a first buffer layer formed on at least a portion of the electrodes and the insulating panel in a surrounding region of the shield cover;
a second buffer layer fanned on at least a portion of the electrodes and the insulating panel in a middle region of the shield cover; and
an adhesive layer located between the first buffer layer and the shield cover to attachment between the insulating panel and the shield cover.
11. The EL device as claimed in claim 10 , wherein the second buffer layer performs electrical insulation between the electrodes.
12. The EL device as claimed in claim 10 , wherein the first buffer layer and the second buffer layer comprise the same or different materials each other.
13. The EL device as claimed in claim 10 , wherein the material of the first buffer is either silicon oxide or silicon nitride, while the material of the second buffer is any one of silicon oxide, silicon nitride, polyimide, and polyacryl.
14. The EL device as claimed in claim 10 , wherein the first buffer layer increases the adhesive strength between the insulating panel and the shield cover, arid prevents from permeating external humidity or oxygen.
15. An EL device comprising:
an insulating panel;
first electrodes formed on the insulating panel;
at least one of EL layers formed on the first electrodes;
second electrodes formed on the at least one of EL layers;
a shield cover located in a spaced apart relation from the insulating panel and the electrodes;
a first buffer layer formed on at least a portion of the first electrodes and the insulating panel in a surrounding region of the shield cover;
a second buffer layer formed at least a-portion -of the first electrodes and the insulating panel in a middle region of the shield cover; and
an adhesive layer located between the first buffer layer and the shield cover to attachment between the insulating panel and the shield cover.
16. The EL device as claimed in claim 15 , wherein the second buffer layer performs electrical insulation between the first electrode and the second electrode and between the second electrodes.
17. The EL device as claimed in claim 15 , further comprising:
electrical insulation barrier stripes located on the second buffer layer between the second electrodes.
18. The EL device as claimed in claim 15 , wherein the first buffer layer and the second buffer layer comprise the same or different materials each other.
19. The EL device as claimed in claim 15 , wherein the material of the first buffer is either silicon oxide or silicon nitride, while the material of the second buffer is any one of silicon oxide, silicon nitride, polyimide, and polyacryl.
20. The EL device as claimed in claim 15 , wherein the first buffer layer increases the adhesive strength between the insulating panel and the shield cover, and prevents from permeating external humidity or oxygen.
21. An EL device comprising:
an insulating panel;
first electrodes formed on the insulating panel;
at least one of EL layers formed on the first electrodes;
second electrodes formed on the at least one of EL layers;
a shield cover located in a spaced apart relation from the insulating panel and the electrodes;
a buffer layer formed on an entire surface of the insulating panel and the first electrodes other than a tap bonding region and a pixel region of the first electrodes; and
an adhesive layer located between the buffer layer arid the shield cover to attachment between the insulating panel and the shield cover.
22. The EL device as claimed in claim 21 , wherein the buffer layer performs electrical insulation between the first electrode and the second electrode and between the second electrodes.
23. The EL device as claimed in claim 21 , further comprising:
electrical insulation barrier stripes located between the second electrodes.
24. The EL device as claimed in claim 21 , wherein the buffer layer is non-conductive.
25. The EL device as claimed in claim 21 , wherein the material of the buffer is any one of silicon oxide, silicon nitride, polyimide, and polyacryl.
26. The EL device as claimed in claim 21 , wherein the buffer layer increases the adhesive strength between the insulating panel and the shield cover, and prevents from permeating external humidity or oxygen.