Distributed programmed memory cell overwrite protection
View Patent ↗A method and circuit for preventing the overprogramming of a memory cell. A fuse circuit is operable to be blown. A combinational logic circuit receives a signal from the fuse circuit, indicating whether or not the fuse has been blown, and controls the programming of the memory cell. The programming of the memory cell is prevented if the fuse circuit has been blown.
1. A circuit to prevent the overprogramming of a reference memory cell, comprising:
a reference memory cell capable of being initially programmed to generate a reference current indicative of whether the reference memory cell is a programmed or unprogrammed cell;
a fuse circuit, wherein the fuse circuit is operable to be blown subsequent to the programming of the reference memory cell; and
a combinational logic circuit that receives a signal from the fuse circuit and controls the programming of the reference memory cell, wherein programming of the reference memory cell is prevented if the fuse circuit has been blown.
2. The circuit of claim 1 , wherein the reference memory cell is a floating gate memory cell.
3. The circuit of claim 1 , wherein the reference memory cell is a fuse memory cell.
4. The circuit of claim 1 , wherein the fuse circuit includes a resistive fuse element that is blown after the reference memory cell has been programmed.
5. The circuit of claim 1 , wherein the fuse circuit and the combinational logic circuit permit the reference memory cell to be read both before and after the fuse circuit has been blown.
6. The circuit of claim 1 , wherein an output of the fuse circuit controls a selection of inputs to a multiplexer contained in the combinational logic circuit.
7. The circuit of claim 4 , wherein the resistive fuse element is comprised of TaAlN.
8. The circuit of claim 4 , wherein the resistive fuse element has a resistance of approximately 90 ohms.
9. The circuit of claim 6 , wherein the output is a relatively high voltage when the fuse circuit has not been blown.
10. The circuit of claim 6 , wherein the output is a relatively low voltage when the fuse circuit has been blown.
11. The circuit of claim 9 , wherein said high voltage corresponds to a digital “1.”
12. The circuit of claim 10 , wherein said low voltage corresponds to a digital “0.”
13. A method for preventing the overprogramming of a reference memory cell, comprising:
providing a reference memory cell capable of being initially programmed to generate a reference current indicative of whether the reference memory cell is a programmed or unprogrammed cell;
applying a write signal to a fuse circuit when the reference memory cell is programmed;
blowing the fuse circuit upon application of the write signal;
outputting a control signal from the fuse circuit indicating whether the fuse circuit has been blown;
receiving the control signal in a combinational logic circuit; and
determining whether the reference memory cell can be programmed based on the received control signal.
14. The method of claim 13 , wherein the reference memory cell is a floating gate memory cell.
15. The method of claim 13 , wherein the reference memory cell is a fuse memory cell.
16. The method of claim 13 , wherein the fuse circuit includes a resistive fuse element that is blown after the reference memory cell has been programmed.
17. The method of claim 13 , wherein the resistive fuse element is comprised of TaAlN.
18. The method of claim 13 , wherein the resistive fuse element has a resistance of approximately 90 ohms.
19. The method of claim 13 , wherein the fuse circuit and the combinational logic circuit permit the reference memory cell to be read both before and after the fuse circuit has been blown.
20. The method of claim 13 , wherein the control signal controls a selection of inputs to a multiplexer contained in the combinational logic circuit and wherein the control signal is a relatively high voltage when the fuse circuit has not been blown.