Micromechanical device with thinned cantilever structure and related methods

1. A process of fabricating a micromechanical device comprising:

providing a first semiconductor wafer having generally planar horizontal dimensions;

forming a recess region in the semiconductor wafer;

securing a semiconductor layer to a surface of the wafer opposite the recess region,

wherein the semiconductor layer includes a vertical dimension generally perpendicular to the generally planar horizontal dimensions of the first semiconductor wafer and includes a horizontal dimension generally parallel to the generally planar horizontal dimension of the first semiconductor wafer, and wherein the act of securing includes:

providing a second wafer with the semiconductor layer formed thereon,

forming a recess in the semiconductor layer,

securing the semiconductor layer to the first surface of the wafer, and

removing the second wafer;

forming a suspended structure in the semiconductor layer disposed opposite the recess region,

wherein the suspended structure includes a vertical dimension generally parallel to a vertical dimension of the semiconductor layer and includes a horizontal dimension generally parallel to a horizontal dimension of the semiconductor layer;

wherein the suspended structure includes a boundary region that is released from other portions of the semiconductor layer except in a flexure region of the boundary region;

wherein the suspended structure includes a seismic mass region within the boundary region;

wherein the flexure region of the boundary region and released portion of the boundary region are disposed to permit generally rotational movement of the seismic mass about an axis through the flexure region and in a direction generally parallel to the vertical dimension of the semiconductor layer; and

wherein a vertical dimension of the flexure region is thin relative to a vertical dimension of the seismic mass region so as to promote such rotational movement in response to an acceleration force applied in a direction generally perpendicular to the horizontal dimension of the semiconductor layer.

2. The process according to claim 1 , wherein the act of securing includes silicon fusion bonding.

3. The process according to claim 1 , wherein the act of forming the suspending structure includes etching substantially vertically through the semiconductor layer with a deep reactive ion etch.

4. The process according to claim 1 , further comprising implanting at least one piezoresistive sensor element to sense flexure in the flexure region.

5. The process according to claim 1 , wherein the act of securing a semiconductor layer includes securing a first sublayer and securing a second sublayer;

wherein the second sublayer defines the flexure region of the suspended structure; and

wherein the first sublayer and the second sublayer together define the seismic mass region of the suspended structure.

6. The process according to claim 1 , wherein removing the second wafer includes etching the second wafer.

7. The process according to claim 1 wherein removing the second wafer includes an electrochemical KOH etch.

8. The process according to claim 1 , further including forming the suspended structure in the semiconductor layer with a KOH etch.

9. The process according to claim 1 , further including forming the suspended structure in the semiconductor layer with a deep reactive ion etch.

10. The process according to claim 1 , further including:

forming a second recess region in the wafer;

forming a thinned region in the semiconductor layer, and

disposing the thinned region opposite the second recess region to allow flexure in a direction generally parallel to the vertical dimension of the semiconductor layer.

11. The process according to claim 10 ,

wherein the semiconductor layer includes a first sublayer and a second sublayer;

wherein the first sublayer defines the flexure region of the suspended structure.