In plane switching mode liquid crystal display device
View Patent ↗A method for fabricating an in-plane switching LCD device includes forming a data line and a light-shielding layer on a substrate, forming a pixel electrode line and an active region with a polycrystalline silicon thin film, forming a first insulating layer on the substrate, forming a gate electrode and a common electrode line on the first insulating layer, forming a second insulating layer on the substrate, forming a first contact hole that exposes at least portions of the data line and the active region, and forming a connection electrode that connects at least portions of the exposed data line and the active region.
1. An in-plane switching LCD device, comprising:
a first substrate and a second substrate facing each other;
a gate line and a data line defining a pixel region by being arranged vertically and horizontally on the first substrate;
a polycrystalline silicon thin film transistor having a channel region in the pixel region;
a common electrode and a pixel electrode in the pixel region generating an in-plane horizontal electric field;
a light-shielding layer positioned on the first substrate and below the channel region, wherein the light shielding layer prevents light from being introduced into the channel region; and
a liquid crystal layer between the first and second substrates.
2. The device of claim 1 , wherein one of the common electrode and the pixel electrode is shaped as a zigzag form.
3. The device of claim 1 , wherein one of the common electrode and the pixel electrode is formed of an opaque metal.
4. The device of claim 1 , wherein one of the common electrode and the pixel electrode is formed of a transparent conductive material.
5. The device of claim 1 , further comprising a common electrode line and a pixel electrode line, the common electrode being extended from the common electrode line and the pixel electrode being extended from the pixel electrode line.
6. The device of claim 5 , further comprising an insulating layer between the common electrode line and the pixel electrode line.
7. The device of claim 6 , wherein the common electrode line and pixel electrode line form a storage capacitor.
8. The device of claim 5 , wherein the common electrode connects to the common electrode line via a second contact hole.
9. The device of claim 5 , wherein the pixel electrode connect to the pixel electrode line via a third contact hole.
10. The device of claim 1 , further comprising a connection electrode connecting a source region of the thin film transistor to the data line via first contact holes.
11. The device of claim 1 , wherein at least one of the gate line and data line has a zigzag shape.
12. The device of claim 1 , wherein the data line and light shielding layer have a double conductive layer structure.
13. The device of claim 12 , wherein a first layer of the double conductive layer structure is a low resistance metal.
14. The device of claim 5 , wherein the pixel electrode line and pixel electrode are a same material.