IP Library Granted Patent US 7,420,848
Granted Patent B2
US 7,420,848 · App. 11/328,015 · Granted Sep 2, 2008

Method, system, and circuit for operating a non-volatile memory array

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Quick Facts
Patent No.
US 7,420,848
App. No.
11/328,015
Granted
Sep 2, 2008
Kind
B2
Abstract

A method and a system for operating bits of memory cells in a memory array, the method including applying a first operating pulse to a terminal of a first cell, the first operating pulse is intended to place the first cell into a predefined state; and applying a second operating pulse to a terminal of a second cell in the set, the second operating pulse is intended to place the second cell to the predefined state, and the pulse characteristics of the second operating pulse are a function of the response of the first cell to the first operating pulse.

Claims (9)

1. A control circuit for operating a set of memory cells in a memory array, said control circuit comprising: a charge circuit adapted to produce a first operating pulse to a terminal of a first cell intended to place the first cell into a predefined state; and a logic unit adapted to determine pulse characteristics of a second operating pulse as a function of the response of the first cell to the first operating pulse.

2. The control circuit according to claim 1 , wherein said logic unit is further adapted to determine pulse characteristics of a third operating pulse as a function of the response of the first cell and a second cell to the first and second operating pulses, respectively.

3. The control circuit according to claim 1 , wherein said logic unit is adapted to adjust the duration of said second operation pulse.

4. The control circuit according to claim 1 , wherein said logic unit is adapted to adjust the amplitude of said second operation pulse.

5. The control circuit according to claim 1 , further comprising a memory buffer adapted to store data received from the set of memory cells.

6. A system for operating a set of memory cells in a memory array, said system comprising: a memory array; a sense amplifier adapted to determine a response of operated cells; and a control circuit adapted to produce a first operating pulse to a terminal of a first cell intended to place the first cell into a predefined state; and adapted to determine pulse characteristics of a second operating pulse as a function of the response of the first cell to the first operating pulse.

7. The system according to claim 6 , wherein said control circuit is further adapted to determine pulse characteristics of a third operating pulse as a function of the response of the first cell and a second cell to the first and second operating pulses, respectively.

8. The system according to claim 6 , wherein said control circuit is adapted to adjust the duration of said second operation pulse.

9. The system according to claim 6 , wherein said control circuit is adapted to adjust the amplitude of said second operation pulse.

Assignments (2)
RELEASE OF SECURITY INTEREST Recorded Mar 16, 2022
From: MUFG UNION BANK, N.A.
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 059410/0438 →
CORRECTIVE ASSIGNMENT TO CORRECT THE FOLLOWING NUMBERS 6272046,7277824,7282374,7286384,7299106,7337032,7460920,7519447 PREVIOUSLY RECORDED ON REEL 039676 FRAME 0237. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Oct 16, 2018
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MORGAN STANLEY SENIOR FUNDING
Reel/Frame 047797/0854 →