Method for fabrication of high temperature superconductors
View Patent ↗A layered article of manufacture and a method of manufacturing same is disclosed. A substrate has a biaxially textured MgO crystalline layer having the c-axes thereof inclined with respect to the plane of the substrate deposited thereon. A layer of one or more of YSZ or Y 2 O 3 and then a layer of CeO 2 is deposited on the MgO. A crystalline superconductor layer with the c-axes thereof normal to the plane of the substrate is deposited on the CeO 2 layer. Deposition of the MgO layer on the substrate is by the inclined substrate deposition method developed at Argonne National Laboratory. Preferably, the MgO has the c-axes thereof inclined with respect to the normal to the substrate in the range of from about 10° to about 40° and YBCO superconductors are used.
1. A method of making a layered article of manufacture, comprising providing a substrate; depositing a biaxially textured MgO crystalline layer from a plume of MgO ions on the substrate by the inclined substrate deposition (ISD) method, the MgO having the c-axes thereof inclined with respect to the substrate normal; depositing a layer of one or more of YSZ or Y 2 O 3 from a source thereof on the biaxially textured MgO crystalline layer; depositing a layer of CeO 2 from a source thereof on said layer of one or more of YSZ or Y 2 O 3 ; and depositing a crystalline superconductor layer from a source thereof on the CeO 2 layer, the crystalline superconductor having the c-axes thereof normal to the substrate.
2. The method of claim 1 , wherein at least some depositions other than MgO are carried out by the pulsed laser deposition method.
3. The method of claim 1 , wherein the plume of the MgO ions are inclined between about 25° and about 70° with respect to the plane of the substrate normal.
4. The method of claim 1 , wherein the angle of the plume of MgO ions inclined 35°±10° or 60°±10° with respect to the substrate normal.
5. The method of claim 3 , wherein relative rotational movement is provided between the substrate and the source of one or more layers.
6. The method of claim 5 , wherein the substrate is rotated during at least some of the depositions to produce a wire.
7. The method of claim 1 , wherein the YSZ and/or the CeO 2 layer is deposited by a method other than ISD.
8. The method of claim 1 , wherein the YSZ and/or the CeO 2 layer is deposited by ISD.