Solid-state imaging device having improved light sensitivity and a method for producing the same

1. A method for producing a solid-state imaging device comprising the steps of:

forming a light receiving unit in an imaging region of a substrate;

forming a shield film projected out around the light receiving unit, on the substrate;

forming an optically transparent insulation film on the shield film;

processing the insulation film by etch-back to form a sidewall insulation film in a side wall of the shield film formed in a periphery portion of the light receiving unit;

forming a mask layer having a mask aperture at a position corresponding to the light receiving unit, on the shield film; and

etching the shield film by using the sidewall insulation film and the mask layer as an etching mask to form an aperture portion exposing the light receiving unit;

wherein, in the step of forming the aperture portion, the shield film under the sidewall insulation film is removed.

2. The method of claim 1 , further comprising a step of forming an electrode in a region of the substrate except for the light receiving unit between the step of forming the light receiving unit and the step of forming the shield film, wherein, in the step of forming the shield film, the shield film is formed to cover the light receiving unit and the electrode.

3. The method of claim 2 , wherein the electrode is a transfer electrode.

4. The method of claim 2 , wherein, in the step of forming the electrode, the electrode is formed by a single layer or a plurality of layers.

5. The method of claim 1 , wherein, in the step of forming the aperture portion, the aperture portion is formed in a rectangle shape.

6. The method of claim 1 , wherein, in the step of forming the aperture portion, the shield film is processed by isotropic etching used with the sidewall insulation film and the mask layer as an etching mask.

7. A method for producing a solid-state imaging device comprising the steps of:

forming a light receiving unit in an imaging region of a substrate;

forming a shield film projected out around the light receiving unit, on the substrate;

forming an optically transparent insulation film on the shield film;

processing the insulation film by etch-back to form a sidewall insulation film in a side wall of the shield film formed in a periphery portion of the light receiving unit;

forming a mask layer having a mask aperture at a position corresponding to the light receiving unit, on the shield film; and

etching the shield film by using the sidewall insulation film and the mask layer as an etching mask to form an aperture portion exposing the light receiving unit,

wherein,

in the step of forming the shield film, a monitor shield film is formed on the substrate in a periphery portion of the imaging region;

in the step of forming the mask layer, a monitor mask layer with a mask aperture is formed on the monitor shield film; and

in the step of etching the shield film, a width of the aperture portion exposing the light receiving unit is managed by monitoring a width of the aperture portion formed in the monitor shield film.

8. A solid-state imaging device comprising:

a light receiving unit formed in a substrate;

a shield film formed on the substrate and having an aperture portion at a position corresponding to the light receiving unit; and

an optically transparent sidewall insulation film formed in an upper portion of a side wall of the shield film along an edge of the aperture portion, the shield film under the sidewall insulation film being removed.

9. The solid-state imaging device as set forth in claim 8 , further comprising an electrode formed in a region except for the light receiving unit on the substrate, wherein the shield film is formed to cover the electrode.

10. The solid-state imaging device as set forth in claim 9 , wherein the electrode is a transfer electrode.

11. The solid-state imaging device as set forth in claim 9 , the electrode is formed by a single layer or a plurality of layers.

12. The solid-state imaging device as set forth in claim 8 , further comprising an interlayer insulation film covering the shield film, wherein a region under the sidewall insulation film is filled by the interlayer insulation film.

13. The solid-state imaging device as set forth in claim 8 , wherein the aperture portion of the shield film is a rectangle shape.

14. A camera comprising:

a solid-state imaging device;

an optical system focusing light on a imaging surface of the solid-state imaging device;

and a signal processing circuit performing a predetermined signal processing to a signal output from the solid-state imaging device,

wherein the solid-state imaging device has a light receiving unit formed in a substrate, a shield film formed on the substrate and having an aperture portion at a position corresponding to the light receiving unit, and

an optically transparent sidewall insulation film formed in an upper portion of a side wall of the shield film along an edge of the aperture portion, the shield film under the sidewall insulation film being removed.

15. The camera as set forth in claim 14 , further comprising an electrode formed in the region except for the light receiving unit, wherein the shield film is formed to cover the electrode.

16. The camera as set forth in claim 15 , wherein the electrode is a transfer electrode.

17. The camera as set forth in claim 15 , wherein the electrode is formed by a single layer or a plurality of layers.

18. The camera as set forth in claim 14 , further comprising an interlayer insulation film covering the shield film, wherein a region under the sidewall insulation film is filled by the interlayer insulation film.

19. The camera as set forth in claim 14 , wherein the aperture portion of the shield film is a rectangle shape.