Optical semiconductor device having photosensitive diodes and process for fabricating such a device

1. A semiconductor device comprising:

in a zone, a structure of photosensitive diodes comprising:

a matrix of lower electrodes;

an intermediate layer made of a photosensitive material formed on the matrix of lower electrodes; and

at least one upper electrode formed on the intermediate layer, and wherein the semiconductor device comprises, beneath the intermediate layer, electrical connection means that includes at least one electrical contact pad and at least one electrical connection pad, in that the semiconductor device includes at least one electrical connection via passing through at least the intermediate layer and connecting the at least one upper electrode to the at least one electrical contact pad, and in that the semiconductor device has at least one well formed outside the zone and passing through at least the intermediate layer, this well exposing the electrical connection pad.

2. The device according to claim 1 , including an upper layer comprising a first layer constituting upper second electrode and a second layer made of an electrically conductive material, the at least one via and the at least one well passing through this upper layer.

3. The device according to claim 1 , including a non-transparent local layer that partly covers the structure of photosensitive diodes.

4. The device according to claim 3 , wherein the local layer is made of an electrically conductive material, the at least one via being connected to this local layer.

5. The device according to claim 1 , including at least one transparent outer protective layer.

6. The device according to claim 1 , further comprising:

a lower dielectric layer in which the matrix of lower electrodes and the at least one electrical contact pad are formed and, beneath this lower layer, a base layer in which the at least one electrical connection pad is formed, the at least one well passing through this lower layer in order to expose this electrical connection pad.

7. The device according to claim 6 , including an upper layer comprising a first layer constituting upper second electrode and a second layer made of an electrically conductive material, the at least one via and the at least one well passing through this upper layer.

8. The device according to claim 6 , including a non-transparent local layer that partly covers the structure of photosensitive diodes.

9. The device according to claim 8 , wherein the local layer is made of an electrically conductive material, the at least one via being connected to this local layer.

10. The device according to claim 8 , wherein the local layer and the at least one via are in the same material.

11. The device according to claim 6 , including at least one transparent outer protective layer.

12. The semiconductor device of claim 1 , wherein the electrical connection means extends under the zone and outside the zone.

13. A process for fabricating a semiconductor device comprising a multiplicity of photosensitive diodes comprising lower electrodes and at least one upper electrode that are separated by an intermediate layer made of a photosensitive material, the process consisting of:

producing a base layer that includes electrical connection means;

forming a dielectric lower layer above the base layer;

producing, in the lower layer, a matrix of lower electrodes that are selectively connected to the electrical connection means;

producing an intermediate layer made of a photosensitive material on the lower layer;

forming an upper layer made of an electrically conductive transparent material;

producing at least one via made of an electrically conductive material through the intermediate and upper layers so as to electrically connect the upper layer and at least one of the lower electrodes; and

producing at least one well through the lower, intermediate and upper layers so as to expose at least one electrical connection pad of the electrical connection means, the at least one electrical connection pad being connected to the at least one via.

14. The process according to claim 13 , wherein the at least one via is produced above the corresponding lower electrode.

15. The process according to claim 13 , further consisting of: forming an upper layer comprising a first layer made of a first electrically conductive material and a second layer made of a second electrically conductive material.

16. The process according to claim 13 , further consisting of: forming a local layer made of a non-transparent material above the upper layer and extending partly above the multiplicity of photosensitive diodes and extending over the at least one via.

17. The process according to claim 13 , wherein the local layer and the at least one via are in the same material.

18. The process according to claim 13 , further consisting of: forming an outer protective layer made of a transparent material.