Process for forming a feature by undercutting a printed mask
View Patent ↗A print patterned mask is formed a digital lithographic process on the surface of a photoresist or similar material layer. The print patterned mask is then used as a development or etching mask, and the underlying layer overdeveloped or overetched to undercut the print patterned mask. The mask may be removed and the underlying structure used an etch mask or as a final structure. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
1. A method of forming a structure, comprising the steps of:
depositing over a substrate a photoresist layer;
exposing the photoresist layer such that the solubility of substantially all of the photoresist layer is altered;
depositing a phase change material over the photoresist layer;
the phase change material deposited using a printing system comprising a printhead;
the printhead including at least one ejector for ejecting the phase change material in liquid phase;
the phase change material deposited in a printed pattern such that the printed pattern remains following a change from liquid phase to solid phase of the phase change material; and
removing the photoresist layer except in a region underlying the printed pattern of phase change material and a portion but not all of the photoresist layer underlying the printed pattern of phase change material;
such that a fine feature of photoresist layer is formed over the substrate, whose width is less than the width of that portion of the phase change material originally located thereover.
2. The method of claim 1 , wherein said photoresist layer is deposited directly on said substrate.
3. The method of claim 1 , wherein said phase change material is deposited directly on said photoresist layer.
4. The method of claim 1 further comprising the step of depositing a thin film material over the substrate, photoresist layer fine feature, and phase change material prior to removal of the phase change material.
5. The method of claim 4 , further comprising the step of removing the photoresist fine feature, and whereby upon removal of the phase change material and photoresist fine feature, that thin film material located over the photoresist fine feature and phase change material is likewise removed, leaving in place the thin film material elsewhere deposited.
6. The method of claim 1 , wherein the photoresist layer underlying the printed pattern of phase change material is removed leaving a photoresist fine feature whose width is in the range of 5 to 20 μm.
7. The method of claim 1 , further comprising the step of depositing a thin film material on the substrate, and wherein the step of depositing the photoresist layer comprises the step of depositing the photoresist layer on the thin film material.
8. The method of claim 7 , further comprising the steps of:
removing the phase change material following the step of removing portions of the photoresist layer; and
removing the thin film material except in a region underlying the photoresist fine feature, of target material, such that a fine feature of thin film material is formed over the substrate, whose width is less than the width of that portion of the phase change material originally located thereover.
9. The method of claim 8 , wherein the thin film material underlying the target material fine feature is removed leaving a thin film material fine feature whose width is in the range of 5 to 20 μm.
10. A method of forming a structure, comprising the steps of:
depositing over a substrate a thin film material;
depositing over the thin film material a photoresist material;
exposing the photoresist material to radiation such that the solubility of substantially all of the photoresist material is altered;
depositing a phase change material over the photoresist material;
the phase change material deposited using a printing system comprising a printhead;
the printhead including at least one ejector for ejecting the phase change material in liquid phase;
the phase change material deposited in a printed pattern such that the printed pattern remains following a change from liquid phase to solid phase of the phase change material;
developing the photoresist material except in a region underlying the printed pattern of phase change material, and developing a portion but not all of the photoresist material layer underlying the printed pattern of phase change material, such that a fine feature of photoresist material is formed over the thin film material, whose width is less than the width of that portion of the phase change material located thereover;
removing the phase change material; and
removing the thin film material except in a region underlying the fine feature of photoresist material, such that a fine feature of thin film material is formed over the substrate, whose width is less than the width of that portion of the phase change material originally located thereover.
11. The method of claim 10 , wherein the thin film material is a conductive metal.
12. The method of claim 10 , wherein the thin film material is a semiconductive material.
13. The method of claim 10 , wherein the thin film material underlying the photoresist material fine feature is removed leaving a thin film material fine feature whose width is in the range of 5 to 20 μm.
14. The method of claim 10 , wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively discontinuing phase change material ejection in the layered phase change material region.
15. The method of claim 10 , wherein the phase change material is deposited in droplets at a selected frequency, and further wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively changing the drop deposition frequency in the layered phase change material region.
16. The method of claim 10 , wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively controlling the speed of printing the phase change material in the layered phase change material region.
17. A method of forming a structure, comprising the steps of:
depositing over a substrate a photoresist material;
exposing the photoresist material to radiation such that the solubility of substantially all of the photoresist is altered;
depositing a phase change material over the photoresist material;
the phase change material deposited using a printing system comprising a printhead;
the printhead including at least one ejector for ejecting the phase change material in liquid phase;
the phase change material deposited in a printed pattern such that the printed pattern remains following a change from liquid phase to solid phase of the phase change material;
developing the photoresist material except in a region underlying the printed pattern of phase change material, and developing a portion but not all of the photoresist material layer underlying the printed pattern of phase change material, such that a fine feature of photoresist material is formed over the substrate, whose width is less than the width of that portion of the phase change material located thereover;
depositing a thin film material over the substrate, photoresist material fine feature, and phase change material;
removing the phase change material; and
removing the photoresist material fine feature;
whereby upon removal of the phase change material and photoresist material fine feature, that thin film material located thereover is likewise removed, leaving in place the thin film material elsewhere deposited.
18. The method of claim 17 , wherein the thin film material remaining after removal of the phase change material and the photoresist material has tapered lateral edges.
19. The method of claim 17 , wherein the phase change material pattern includes a gap between two regions of phase change material, wherein the photoresist material is developed below the gap as well as in regions underlying the printed pattern of phase change material and regions underlying the printed pattern of phase change material, such that adjacent, spaced-apart fine features of photoresist material are formed over the substrate, each of whose width is less than the width of that portion of the phase change material located thereover, and whereby upon removal of the phase change material and photoresist material fine features, that thin film material located thereover is likewise removed, leaving in place a thin film fine feature.
20. The method of claim 19 , wherein the width of the thin film material fine feature so formed is in the range of 5 to 20 μm.
21. The method of claim 20 , wherein the thin film material fine feature has tapered lateral edges.
22. A method of forming a structure, comprising the steps of:
depositing over a substrate a black matrix material comprising a pigmented photoresist;
exposing the black matrix material to light in order to alter the solubility of substantially all of the black matrix material;
depositing a phase change material over the black matrix material;
the phase change material deposited using a printing system comprising a printhead;
the printhead including at least one ejector for ejecting the phase change material in liquid phase;
the phase change material deposited in a printed pattern defining a bounded opening such that the printed pattern remains following a change from liquid phase to solid phase of the phase change material;
removing the black matrix material except in a region underlying the printed pattern of phase change material, and removing a portion but not all of the black matrix material layer underlying the printed pattern of phase change material, such that a bounded structure of black matrix material is formed over the substrate, the bounded structure formed by elements of black matrix material, the width of each element of black matrix material being less than the width of that portion of the phase change material located thereover; and
removing the phase change material, leaving in place at least the bounded structure of black matrix material.
23. The method of claim 22 , wherein each element of black matrix material is formed to have a generally concave cross section.
24. The method of claim 22 , wherein the black matrix material as deposited is relatively hydrophobic, and following the step of removing the black matrix material but prior to the step of removing the phase change material, treating the exposed black matrix material such that it becomes relatively more hydrophilic than originally deposited.
25. The method of claim 22 , wherein said treatment comprises treating the exposed black matrix material by exposing it to either an oxygen plasma or to ozone in order to render it relatively more hydrophilic than originally deposited.
26. The method of claim 22 , wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively discontinuing phase change material ejection in the layered phase change material region.
27. The method of claim 22 , wherein the phase change material is deposited in droplets at a selected frequency, and further wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively changing the drop deposition frequency in the layered phase change material region.
28. The method of claim 22 , wherein the printed pattern of phase change material includes layered phase change material regions where regions of the phase change material are deposited over previously deposited regions of phase change material, further comprising the step of controlling linewidth in the layered phase change material regions by selectively controlling the speed of printing the phase change material in the layered phase change material region.
29. The method of claim 22 , further comprising the step of depositing a color filter material within the bounded structure of black matrix material prior to the step of removing the phase change material.
30. The method of claim 29 , wherein the volume of color filter material is no more than 10 times the volume of the bounded structure of black matrix material.
31. The method of claim 29 , further comprising the steps of:
hardening the color filter material prior to the step of removing the phase change material, such that upon removal of the phase change material hardened regions of color filter material isolated by black matrix material are formed over the substrate.