Resist composition and pattern forming method using the same

1 . A resist composition comprising (A) an acid generator represented by formula (1):

wherein S 1 to S 8 each independently represents a substituent;

a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2;

X represents a single bond or a divalent linking group;

R 1 and R 2 each independently represents a hydrogen atom or a substituent, and R 1 and R 2 may combine with each other to represent a single bond or a divalent linking group; and

Y − and Z − each independently represents an organic sulfonate anion.

2 . The resist composition according to claim 1 , which is a positive resist composition, and the resist composition further comprising (BP) a polymer which is insoluble or sparingly soluble in an aqueous alkali solution but becomes soluble in an aqueous alkali solution under an action of an acid.

3 . The resist composition according to claim 1 , which is a negative resist composition, and the resist composition further comprising: (BN) an alkali-soluble resin; and (C) a crosslinking agent capable of crosslinking by an effect of an acid.

4 . The resist composition according to claim 1 , further comprising (A2) a compound having a structure represented by one of formulae (I) to (III), which generates an acid upon irradiation with one of an actinic ray and radiation:

wherein R 1 to R 37 , which may be the same or different, each independently represents a hydrogen atom, an alkyl group, an alkoxy group, a hydroxyl group, a halogen atom or an —S—R 38 group, and wherein R 38 represents an alkyl group or an aryl group; and

X − represents an alkylsulfonate, a benzenesulfonate, a naphthalenesulfonate or an anthracenesulfonate anion each having at least one selected from the group consisting of

at least one fluorine atom,

an alkyl group substituted with at least one fluorine atom,

an alkoxy group substituted with at least one fluorine atom,

an acyl group substituted with at least one fluorine atom,

an acyloxy group substituted with at least one fluorine atom,

a sulfonyl group substituted with at least one fluorine atom,

a sulfonyloxy group substituted with at least one fluorine atom,

a sulfonylamino group substituted with at least one fluorine atom,

an aryl group substituted with at least one fluorine atom,

an aralkyl group substituted with at least one fluorine atom, and

an alkoxycarbonyl group substituted with at least one fluorine atom.

5 . The resist composition according to claim 2 , further comprising at least one of (A3) a compound capable of generating a fluorine-containing carboxylic acid upon irradiation with one of an actinic ray and radiation and (A4) a compound capable of generating a fluorine-free carboxylic acid upon irradiation with one of an actinic ray and radiation.

6 . The resist composition according to claim 3 , further comprising at least one of (A3) a compound capable of generating a fluorine-containing carboxylic acid upon irradiation with one of an actinic ray and radiation and (A4) a compound capable of generating a fluorine-free carboxylic acid upon irradiation with one of an actinic ray and radiation.

7 . The resist composition according to claim 4 , further comprising at least one of (A3) a compound capable of generating a fluorine-containing carboxylic acid upon irradiation with one of an actinic ray and radiation and (A4) a compound capable of generating a fluorine-free carboxylic acid upon irradiation with one of an actinic ray and radiation.

8 . The resist composition according to claim 1 , which is utilized with an electron beam, EUV or an X-ray.

9 . A pattern forming method comprising:

forming a resist film from a resist composition according to claim 1; and

exposing and developing the resist film.