Apparatus using Manhattan geometry having non-Manhattan current flow
View Patent ↗A device is described, including a first diffusion region having a first terminal, a second diffusion region having a second terminal, and a channel region disposed between the first diffusion region and the second diffusion region. Further, the first terminal and the second terminal are offset to enable a non-Manhattan current flow. A system is also described, including the previously described device and a second transistor. The pathway for the flow of the majority of the current carriers in the device defines a first direction. The second transistor also has at least two terminals, and a pathway for a majority of current carriers between the two terminals defines a second direction. The angle between the first direction and the second direction is nonzero and acute.
1. A system for measuring stress, comprising:
a first transistor comprising:
a first diffusion region having a first terminal;
a second diffusion region having a second terminal; and
a channel region disposed between the first diffusion region and the second diffusion region, wherein only a portion of the first diffusion region and only a portion of the second diffusion region borders the channel region,
wherein the first transistor channel region has a stair-step shape,
wherein at least one of the first diffusion region and the second diffusion region has a resistance greater than an effective resistance of the first transistor,
wherein the first terminal and the second terminal are offset to enable a non-Manhattan current flow, and
wherein a first pathway for a majority of current carriers between the first terminal and the second terminal defines a first direction;
a second transistor comprising:
a third diffusion region having a third terminal; and
a fourth diffusion region having a fourth terminal,
wherein a second pathway for a majority of current carriers between the third terminal and the fourth terminal defines a second direction, and
wherein an angle between the first direction and the second direction is nonzero and acute;
at least one ammeter to measure the non-Manhattan current flow and a second current flow between the third terminal and the fourth terminal of the second transistor; and
a stress computer for determining a magnitude of a stress on a substrate by comparing the non-Manhattan current flow and the second current flow.
2. The system of claim 1 , wherein the first transistor and the second transistor are disposed in accordance with Manhattan geometry rules.
3. The system of claim 1 , wherein at least one selected from the group consisting of the first diffusion region, the second diffusion region, the third diffusion region and the fourth diffusion region is a p-type region.
4. A method of measuring stress comprising:
measuring a non-Manhattan current flow in a first transistor comprising a first terminal offset from a second terminal to enable the non-Manhattan current flow;
measuring a second current flow in a second transistor comprising a third terminal and a fourth terminal,
wherein a first pathway for a majority of current carriers between the first terminal and the second terminal define a first direction,
wherein a second pathway for a majority of current carriers between the third terminal and the fourth terminal defines a second direction, and
wherein an angle between the first direction and the second direction is nonzero and acute; and
comparing the non-Manhattan current flow and the second current flow to determine the stress.
5. The method of claim 4 , wherein the non-Manhattan current flow is measured using an ammeter.
6. The method of claim 4 , wherein the comparing the non-Manhattan current flow and the second current flow is performed using a stress computer.