Smooth surface liquid phase epitaxial germanium
A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. Then, the method conformally deposits Ge overlying the silicon nitride insulator layer and Si seed access region, forming a Ge layer with a first surface roughness, and smoothes the Ge layer using a chemical-mechanical polish (CMP) process. Typically, the method encapsulates the Ge layer and anneals the Ge layer to form a LPE Ge layer. A Ge layer is formed with a second surface roughness, less than the first surface roughness. In some aspects, the method forms an active device in the LPE Ge layer.
1. A method for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface, the method comprising:
providing a silicon (Si) wafer;
forming a silicon nitride insulator layer overlying the Si wafer;
selectively etching the silicon nitride insulator layer, forming a Si seed access region;
conformally depositing Ge overlying the silicon nitride insulator layer and Si seed access region;
forming a Ge layer with a first surface roughness;
smoothing the Ge layer using a chemical-mechanical polish (CMP) process; and,
in response to the smoothing, forming a second surface roughness on the Ge layer, less than the first surface roughness.
2. The method of claim 1 further comprising:
selectively etching the Ge layer;
encapsulating the Ge layer;
annealing the Ge layer to form a LPE Ge layer; and,
forming an active device in the LPE Ge layer.
3. The method of claim 1 wherein forming the Ge layer with the first surface roughness includes forming a Ge layer with a thickness in the range of about 20 to 1000 nanometers (nm) and a surface roughness of greater than about 5 nm; and,
wherein forming the second surface roughness on the Ge layer includes forming a Ge layer with a surface roughness of less than about 5 nm.
4. The method of claim 1 wherein smoothing the Ge layer includes using a CMP process with a colloidal silica slurry.
5. The method of claim 4 wherein using the CMP process with the colloidal silica slurry includes using a slurry with a particle size of about 50 nm or less.
6. The method of claim 5 wherein smoothing the Ge layer includes using a slurry that is about 30% or less, solids, with a pH of about 9, or greater.
7. The method of claim 1 wherein smoothing the Ge layer includes using a CMP process with a down force in the range of about 1 to 10 pound-force per square inch (psi).
8. The method of claim 1 wherein conformally depositing Ge includes depositing Ge using a process selected from the group consisting of chemical vapor deposition (CVD), plasma-enhanced CVD, photo-assisted CVD, thermal CVD, physical vapor deposition (PVD), sputtering, evaporation, laser ablation, and molecular beam epitaxy (MBE).
9. The method of claim 8 wherein depositing the Ge layer includes depositing the Ge at a temperature in the range of about 200 and 850° C.
10. The method of claim 1 wherein smoothing the Ge layer using the CMP process includes removing a portion of the Ge layer surface in the range of about 20 to 300 nm.
11. A method for forming a germanium (Ge) structure with a smooth surface, the method comprising:
providing a substrate;
conformally depositing a Ge layer with a first surface roughness overlying the substrate;
smoothing the Ge layer with a chemical-mechanical polish (CMP) process using a colloidal silica slurry; and,
in response to the smoothing, forming a second surface roughness on the Ge layer, less than the first surface roughness.
12. The method of claim 11 wherein using the CMP process with the colloidal silica slurry includes using a slurry with a particle size of about 50 nm, or less.
13. The method of claim 12 wherein using the CMP process with a colloidal slurry includes using a slurry that is about 30% or less, solids, with a pH of about 9, or greater.
14. The method of claim 11 wherein using the CMP process includes using a CMP process with a down force in the range of about 1 to 10 pound-force per square inch (psi).
15. The method of claim 11 further comprising:
exposing the Ge layer to a silicon seed region;
subsequent to smoothing the Ge layer, encapsulating the Ge layer;
annealing the encapsulated Ge layer; and,
forming a liquid phase epitaxial (LPE) Ge layer.
16. The method of claim 11 wherein depositing Ge includes depositing Ge using a process selected from the group consisting of chemical vapor deposition (CVD), plasma-enhanced CVD, photo-assisted CVD, thermal CVD, physical vapor deposition (PVD), sputtering, evaporation, laser ablation, and molecular beam epitaxy (MBE).
17. The method of claim 16 wherein depositing the Ge layer includes depositing the Ge at a temperature in the range of about 200 and 850° C.
18. The method of claim 11 wherein forming the Ge layer with the first surface roughness includes forming a Ge layer with a thickness in the range of about 20 to 1000 nanometers (nm) and a surface roughness of greater than about 5 nm; and,
wherein forming the second surface roughness on the Ge layer includes forming a Ge layer with a surface roughness of less than about 5 nm.
19. The method of claim 11 wherein smoothing the Ge layer with the CMP process includes removing a portion of the Ge layer surface in the range of about 20 to 300 nm.