Switching device for a pixel electrode and methods for fabricating the same
The invention discloses a switching devise for a pixel electrode of display devise and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) materia layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/ drain.
1. A switching element for a pixel electrode of a display device, comprising:
a gate on a substrate;
a semiconductor layer on the gate;
a source and a drain on a portion of the semiconductor layer; and
a low-k dielectric layer disposed between the gate and the semiconductor layer, wherein the low-k dielectric layer consists essentially of a-SiC:H or a-SiCN:H.
2. The switching element of a pixel electrode according to claim 1 , further comprising a pixel electrode electrically connected to the source or the drain.
3. The switching element of a pixel electrode according to claim 1 , wherein the low-k dielectric layer conformally overlies the gate.
4. The switching element of a pixel electrode according to claim 1 , wherein the substrate comprises a glass substrate or a plastic substrate.
5. The switching element of a pixel electrode according to claim 1 , wherein the gate comprises Cu, Ag, Al, or metal alloy thereof.
6. The switching element of a pixel electrode according to claim 1 , wherein the semiconductor layer comprises silicon.
7. The switching element of a pixel electrode according to claim 1 , wherein the source/drain comprises Cu, Ag, Al, or metal alloy thereof.
8. The switching element of a pixel electrode according to claim 1 , wherein the low-k dielectric layer comprises a gate insulating layer.
9. The switching element of a pixel electrode according to claim 1 , further comprising a cap-passivation layer on the source and the drain, wherein the cap-passivation layer is consisting essentially of a-SiC:H or a-SiCN:H.
10. A method of fabricating a switching element for a pixel electrode of a display device, comprising:
forming a gate on a substrate;
forming a low-k dielectric layer on the gate, wherein the low-k dielectric layer consists essentially of a-SiC:H or a-SiCN:H;
forming a semiconductor layer on the low-k dielectric layer and over the gate; and
forming a source and a drain on a portion of the semiconductor layer.
11. The method according to claim 10 , further comprising a pixel electrode electrically connected to the source or the drain.
12. The method according to claim 10 , wherein the low-k dielectric layer conformally overlies the gate.
13. The method according to claim 10 , wherein the substrate comprises a glass substrate or a plastic substrate.
14. The method according to claim 10 , wherein the gate comprises Cu, Ag, Al, or metal alloy thereof.
15. The method according to claim 10 , wherein the semiconductor layer comprises silicon.
16. The method according to claim 10 , wherein the source/drain comprises Cu, Ag, Al, or metal alloy thereof.
17. The method according to claim 10 , wherein the low-k dielectric layer comprises a gate insulating layer.
18. The method according to claim 10 , further comprises forming a cap-passivation layer on the source and the drain, wherein the cap-passivation layer is consisting essentially of a-SiC:H or a-SiCN:H.