Amorphous selenium flat panel x-ray imager for tomosynthesis and static imaging
View Patent ↗A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on a non-insulating organic layer. The organic layer is directly on an amorphous selenium-based charge generator layer allowing charge transport across the layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.
1. A digital, flat panel x-ray imager exhibiting low ghosting and rapid recovery time, comprising:
a substrate having an upper surface;
a selenium-based charge generator layer on the upper surface of the substrate responsive to x-rays to generate electrical charges;
a non-insulating organic layer directly on, and in physical contact with, an upper surface of the selenium-based charge generator layer;
a top electrode directly on, and in physical contact with, an upper surface of the non-insulating organic layer;
a charge collection electrode between the substrate and the charge generator layer, said charge collection electrode being divided into a two-dimensional array of pixel electrodes;
a read-out circuit, also between the substrate and the charge generator layer, said read-out circuit comprising respective signal storage capacitors coupled with said pixel electrodes and storing electrical charge collected thereby from the charge generating layer, and further comprising a thin-film transistor array of respective gating transistors coupled with said signal storage capacitors;
wherein each of said gating transistors is selectively switched between an ON state in which it passes charge from the respective storage capacitors to an outside circuit and an OFF state in which it passes leakage current; and
wherein the leakage current of each of said gating transistors rises at a relatively low rate with rise in potential at the respective capacitor below the range of 20–25 volts but rises at a significantly higher rate with rise in potential at the respective capacitor above said range.
2. The imager as in claim 1 , wherein the imager is a mammography imager.
3. The imager as in claim 1 in which the non-insulating organic layer comprises essentially at least one of phthalocyanines (Pc), oxidiazols and oxazoles, polythiophenes, pentacenes, oligothiophenes, TCNQ (tetracyanoquinodimethane), TDEA (tetrakis demethylaminoethane), tetracarboxylic dianhydride, fullerenes (C60, C70), arylalkanes, arylamines, polysilylenes, polygermanes, PVK (poly-vinylcarbazole) and related compounds, and pyrazolines.
4. The imager as in claim 1 , wherein the non-insulating organic layer is within the range of about 50 Angstroms to about 10,000 Angstroms.
5. The imager as in claim 1 in which the top electrode comprises essentially at least one of Cr, Al and indium-tin oxide (ITO) or an alloy comprising at least one of Cr and Al.
6. The imager as in claim 1 in which the top electrode comprises essentially Cr or an alloy thereof.
7. The imager of claim 6 , wherein the thickness of the top electrode is within the range of about 50 Angstroms to about 10,000 Angstroms.
8. The imager of claim 7 , wherein the thickness of the top electrode is within the range of about 150 Angstroms to about 2,000 Angstroms.
9. The imager as in claim 1 in which the top electrode comprises essentially Al or an alloy thereof.
10. The imager as in claim 1 in which the top electrode comprises essentially indium-tin oxide.
11. The imager as in claim 1 in which the top electrode is made of an electrically conductive material that has a work function lower than 4.0 electron volt.
12. The imager as in claim 1 in which the top electrode is made of an electrically conductive material that has a work function lower than 4.5 electron volt.
13. The imager as in claim 1 in which the top electrode is made of an electrically conductive material that has a lower work function than selenium.
14. The imager as in claim 1 in which the top electrode is made of a one or more elements having an atomic number lower than 60.
15. The imager as in claim 1 in which the leakage current of each of said transistors is less than 2 pA at transistor voltage of 20 volts and more than 20 pA at transistor voltage of 35 volts.
16. The imager as in claim 1 in which the leakage current increases progressively with transistor voltage in the range of 20 volts to 30 volts.
17. The imager as in claim 1 in which the leakage current increases progressively with transistor voltage above 20 volts.
18. A medical x-ray imaging method comprising:
providing a digital, flat panel x-ray imager comprising an amorphous selenium-based charge generating layer that generates electrical charges in response to x-rays, a non-insulating organic layer on a top surface of the charge generating layer, and a top electrode on a top surface of the non-insulating organic layer, and a thin film transistor (TFT) array on a bottom surface of the charge generating layer, said TFT array comprising respective gating transistors coupled with signal storage elements collecting charge generated at respective regions of the charge generating layer in response to x-ray irradiation;
carrying out medical imaging an object with said imager, said object attenuating x-rays irradiation some but not all of said regions of the charge generating layer; and
said transistors having leakage current that is sufficiently low at transistor voltages that correspond to irradiation through the object to allow imaging the object but is sufficiently high at transistor voltages that correspond to irradiation not attenuated by the object to resist transistor breakdown.
19. A medical x-ray imaging method comprising:
providing a digital, flat panel x-ray imager comprising a top electrode layer formed directly on, and in electrical contact with, one major surface of the charge generating layer, and a thin film transistor (TFT) array at an opposite major surface of the charge generating layer, said TFT array comprising respective gating transistors coupled with signal storage elements collecting charge generated at respective regions of the charge generating layer in response to x-ray irradiation;
carrying out medical imaging an object with said imager, said object attenuating x-rays irradiation some but not all of said regions of the charge generating layer; and
said transistors having leakage current that rises at a relatively low rate with rise in potential at the respective capacitor below the range of 20–25 volts but rises at a significantly higher rate with rise in potential at the respective capacitor above said range, thereby protecting the transistors from breakdown damage even when the respective pixel electrode collects charge generated at a region of the charge generator layer receiving x-rays that are not attenuated by an object being imaged with said imager in medical imaging.
20. The imager of claim 1 , wherein the thickness of the top electrode is within the range of about 50 Angstroms to about 10,000 Angstroms.
21. The imager of claim 20 , wherein the thickness of the top electrode is within the range of about 150 Angstroms to about 2,000 Angstroms.
22. A medical x-ray imaging method comprising:
providing a digital, flat panel x-ray imager comprising an amorphous selenium-based charge generating layer that generates electrical charges in response to x-rays, and a top electrode on a top surface of the charge generating layer, and a thin film transistor (TFT) array on a bottom surface of the charge generating layer, said TFT array comprising respective gating transistors coupled with signal storage elements collecting charge generated at respective regions of the charge generating layer in response to x-ray irradiation;
carrying out medical imaging an object with said imager, said object attenuating x-rays irradiation some but not all of said regions of the charge generating layer; and
said transistors having leakage current that is sufficiently low at transistor voltages that correspond to irradiation through the object to allow imaging the object but is sufficiently high at transistor voltages that correspond to irradiation not attenuated by the object to resist transistor breakdown.
23. The imager as in claim 22 in which the top electrode comprises essentially Cr or an alloy thereof.
24. The imager of claim 23 , wherein the thickness of the top electrode is within the range of about 50 Angstroms to about 10,000 Angstroms.
25. The imager of claim 24 , wherein the thickness of the top electrode is within the range of about 150 Angstroms to about 2,000 Angstroms.
26. The imager of claim 22 , wherein the thickness of the top electrode is within the range of about 50 Angstroms to about 10,000 Angstroms.
27. The imager of claim 26 , wherein the thickness of the top electrode is within the range of about 150 Angstroms to about 2,000 Angstroms.