Sealed-by-resin type semiconductor device
View Patent ↗A semiconductor device such as a COF or the like is provided on a semiconductor chip on a film-like shaped flexile wiring substrate on which a wiring pattern is formed. Between the semiconductor chip and the flexile wiring substrate, a sealing resin is filled for protecting the semiconductor chip. In the semiconductor device, a resin trace is 0.1 to 1.0 mm in width and 10 μm in thickness, the resin trace being formed when applying the sealing resin along a longitudinal side of the semiconductor chip.
1. A semiconductor device in which a semiconductor element is mounted on a flexible wiring substrate having a film-like shape and a wiring pattern thereon, wherein:
a sealing resin fills a gap between the flexible wiring substrate and the semiconductor element, the sealing resin protecting the semiconductor element;
a resin trace and peripheral resin portions are formed when the sealing resin is applied along at least one longitudinal side of the semiconductor element via a nozzle;
the resin trace remains on an area through which the sealing resin is applied via the nozzle and the resin trace is formed only at the one longitudinal side of the semiconductor element; and
the resin trace is 0.1 to 1.0 mm in width and not more than 10 μm in thickness.
2. The semiconductor device of claim 1 , wherein
the peripheral resin portions were formed respectively on longitudinal sides of the semiconductor element when the sealing resin is applied along one of the longitudinal sides of the semiconductor element via a nozzle; and
the peripheral resin portion on one of the longitudinal sides is not more than 1.0 mm in width from the semiconductor element, and the peripheral resin portion on the other one of the longitudinal sides is not more than 0.8 mm.
3. The semiconductor device as set forth in claim 2 , wherein: the sealing resin has a viscosity in a range of 50 to 600 mPa·S at 25° C.
4. The semiconductor device as set forth in claim 2 , wherein: the sealing resin has a temperature in a range of 60 to 120° C., when applied.
5. The semiconductor device as set forth in claim 2 , wherein: the sealing resin contains a coloring agent by 0.10 to 0.30% by weight.
6. The semiconductor device as set forth in claim 2 , wherein:
a plurality of the flexible wiring substrates are sequentially formed on a film carrier tape; and
a plurality of the semiconductor elements are mounted respectively on the plurality of the flexible wiring substrates.
7. A semiconductor device as set forth in claim 2 , wherein:
the flexible wiring substrate is connected to a liquid crystal module provided with a liquid crystal display device and a peripheral component.
8. The semiconductor device as set forth in claim 1 , wherein:
the sealing resin has a viscosity in a range of 50 to 600 mPa·S at 25° C.
9. The semiconductor device as set forth in claim 1 , wherein: the sealing resin has a temperature in a range of 60 to 120° C., when applied.
10. The semiconductor device as set forth in claim 1 , wherein: the sealing resin contains a coloring agent by 0.10 to 0.30% by weight.
11. The semiconductor device as ser forth in claim 1 , wherein: the resin trace is only along one longitudinal side of the semiconductor element.
12. The semiconductor device as set forth in claim 1 , wherein:
a plurality of the flexible wiring substrates are sequentially formed on a film carrier tape; and
a plurality of the semiconductor elements are mounted respectively on the plurality of the flexible wiring substrates.
13. A semiconductor device as set forth in claim 1 , wherein:
the flexible wiring substrate is connected to a liquid crystal module provided with a liquid crystal display device and a peripheral component.