IP Library Granted Patent US 7,420,439
Granted Patent B2
US 7,420,439 · App. 11/344,842 · Granted Sep 2, 2008

Micro-resonator, band-pass filter, semiconductor device and communication apparatus

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Quick Facts
Patent No.
US 7,420,439
App. No.
11/344,842
Granted
Sep 2, 2008
Kind
B2
Abstract

A micro-resonator of a single structure which outputs signals of two resonance frequencies of mutually opposite phases and in which different resonance frequencies are adjusted independently is provided. The micro-resonator includes: an oscillation portion 6 sustained with a gap by support portions 8 [8 A, 8 B] and an input electrode 3 and an output electrode 4 that become lower electrodes facing the oscillation portion 6 across the gap, in which the input electrode 3 and the output electrode 4 are disposed to face each other along a line intersecting the oscillation portion 6 , the oscillation portion 6 generates torsional oscillation and flexural oscillation, and output signals of two resonance frequencies close to each other based on different resonance modes have mutually different phases by 180°.

Claims (10)

1. A micro-resonator of a single structure, having two similar resonance frequencies based on different resonance modes, in which output signals of said two resonance frequencies have mutually different phases by 180°; an oscillation portion including a gap and sustained by one or a plurality of support portions; and

lower electrodes including an input electrode and an output electrode, said lower electrodes facing said oscillation portion across said gap,

wherein said input electrode and output electrode are disposed to face each other along a line intersecting said oscillation portion, and

wherein said oscillation portion generates torsional oscillation and flexural oscillation.

2. The micro-resonator according to claim 1 , wherein said oscillation portion generates flexural oscillation with two support portions as nodes and generates torsional oscillation with a line connecting the two support portions as an axis.

3. The micro-resonator according to claim 2 , wherein said oscillation portion has blade portions receiving electrostatic power from said lower electrodes on both sides of a portion that becomes a torsional axis on the line connecting the two support portions.

4. The micro-resonator according to claim 1 , wherein said support portions, said oscillation portion, and said lower electrodes are made of polycrystalline silicon.

5. A band-pass filter comprising the micro-resonator according to claim 1 .

6. A semiconductor device comprising the micro-resonator according to claim 1 .

7. A communication apparatus having a filter to limit the band of a transmission signal and/or a reception signal, wherein said filter including a micro-resonator according to claim 1 as said filter.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040419/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 31, 2006
From: MORITA, SHINYA; KINOSHITA, TAKASHI; MITARAI, SHUN
To: SONY CORPORATION
Reel/Frame 017538/0276 →