Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same
View Patent ↗A photoresist composition includes a novolac resin having where each of R 1 , R 2 , R 3 , and R 4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound having Z 1 -SH, or SH-Z 2 -SH, where each of Z 1 and Z 2 is an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.
1. A photoresist composition, comprising:
a novolac resin having
where each of R 1 , R 2 , R 3 , and R 4 is a hydrogen atom or an alkyl group containing one through six carbon atoms and n is an integer ranging from zero through three; and
a mercapto compound having
Z 1 -SH, or
SH-Z 2 -SH,
where each of Z 1 and Z 2 is an alkyl group or an alkyl group containing one through twenty carbon atoms,
a sensitizer, and
a solvent.
2. The composition of claim 1 , wherein the weight percentage of the novolac resin ranges from approximately 5 through 50 wt %, the weight percentage of the sensitizer ranges from approximately 3 through 20 wt %, and the weight percentage of the mercapto compound ranges from approximately 0.5 through 15 wt %, and the remaining percentage of the photoresist composition is the solvent.
3. The composition of claim 1 , wherein the mercapto compound is at least one compound selected from a group consisting of 2-mercapto toluene, 3- mercapto toluene, 4- mercapto toluene, ethyl ester 3-mercapto propionate, methyl ester 3-mercapto propionate, 3- mercapto propyl dimethoxy methyl silane, 3-mercapto propyl trimethoxy silane, 2-mercapto ethyl sulfide, 2-mercapto pyrimidine, 2-mercapto-4-pyrimidone, 2-mercapto-para-xylene, 4- mercapto-meta-xylene, and 1 -dodecyl mercaptan.
4. The composition of claim 1 , wherein the photoresist composition further comprises:
a silicone compound comprising at an epoxy group and/or an amine group.
5. The composition of claim 2 , wherein the mercapto compound is at least one compound selected from a group consisting of 2-mercapto toluene, 3-mercapto toluene, 4-mercapto toluene, ethyl ester 3-mercapto propionate, methyl ester 3-mercapto propionate, 3-mercapto propyl dimethoxy methyl silane, 3-mercapto propyl trimethoxy silane, 2-mercapto ethyl sulfide, 2-mercapto pyrimidine, 2-mercapto-4-pyrimidone, 2-mercapto-para-xylene, 4-mercapto-meta-xylene, and 1-dodecyl mercaptan.
6. The composition of claim 2 , wherein the photoresist composition further comprises:
a silicone compound comprising at an epoxy group and/or an amine group.
7. The composition of claim 5 , wherein the photoresist composition further comprises:
a silicone compound comprising at an epoxy group and/or an amine group.
8. The composition of claim 7 , wherein the silicone compound is at least one compound selected from a group consisting of (3-glycide oxypropyl)trimethoxy silane, (3-glycide oxypropyl)triethoxy silane, (3-glycide oxypropyl)methyl dimethoxy silane, (3-glycide oxypropyl)methyl diethoxy silane, (3-glycide oxypropyl)dimethyl methoxy silane, (3-glycide oxypropyl)dimethyl ethoxy silane, 3,4-epoxy butyl trimethoxy silane, 3,4-epoxy butyl triethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl trimethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl triethoxy silane, and aminopropyl trimethoxy silane.
9. A method of forming a film pattern, comprising:
depositing a conductive or nonconductive film on a substrate;
coating a photoresist composition on the substrate;
exposing the photoresist composition to light to form a masking member; and
etching the thin film using the masking members,
wherein the photoresist comprises:
a novolac resin comprising:
where each of R 1 , R 2 , R 3 , and R 4 is a hydrogen atom or an alkyl group containing one through six carbon atoms and n is an integer ranging from zero through three,
a mercapto compound having
Z 1 -SH, or
SH-Z 2 -SH,
where each of Z 1 and Z 2 is an alkyl group or alkyl group containing one through twenty carbon atoms,
a sensitizer, and
a solvent.
10. The method of claim 9 , wherein the weight percentage of the novolac resin ranges from approximately 5 through 50 wt %, the weight percentage of the sensitizer ranges from approximately 3 through 20 wt %, and the weight percentage of the mercapto compound ranges from approximately 0.5 through 15 wt %, and the remaining percentage of the photoresist composition is the solvent.
11. The composition of claim 9 , wherein the silicone compound is at least one compound selected from a group consisting of (3-glycide oxypropyl)trimethoxy silane, (3-glycide oxypropyl)triethoxy silane, (3-glycide oxypropyl)methyl dimethoxy silane, (3-glycide oxypropyl)methyl diethoxy silane, (3-glycide oxypropyl)dimethyl methoxy silane, (3-glycide oxypropyl)dimethyl ethoxy silane, 3,4-epoxy butyl trimethoxy silane, 3,4-epoxy butyl triethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl trimethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl triethoxy silane, and aminopropyl trimethoxy silane.
12. A method of manufacturing a thin film transistor array panel, comprising:
forming a gate line comprising a gate electrode on a substrate;
forming a gate insulating layer on the gate line;
forming a semiconductor layer on the gate insulating layer;
forming a data line including a source electrode and a drain electrode on the semiconductor layer; and
forming a pixel electrode connected with the drain electrode,
wherein at least one of the formings comprises lithography and etching that comprises:
depositing a conductive or nonconductive film on a substrate;
coating a photoresist composition on the film;
exposing the photoresist composition to light and forming a masking member; and
etching the thin film using the masking member, and
wherein the photoresist composition comprises:
a novolac resin having
where each of R 1 , R 2 , R 3 , and R 4 is a hydrogen atom or an alkyl group containing between one through six carbon atoms and n is an integer ranging from zero through three,
a mercapto compound having
Z 1 -SH, or
SH-Z 2 -SH,
where each of Z 1 and Z 2 is an alkyl group or alkyl group containing one through twenty carbon atoms,
a sensitizer, and
a solvent.
13. The method of claim 8 , wherein the weight percentage of the novolac resin ranges from approximately 5 through 50 wt %, the weight percentage of the sensitizer ranges from approximately 3 through 20 wt %, and the weight percentage of the mercapto compound ranges from approximately 0.5 through 15 wt %, and the remaining percentage of the photoresist composition is the solvent.
14. The composition of claim 12 , wherein the photoresist composition further comprises:
a silicone compound comprising at an epoxy group and/or an amine group.
15. The method of claim 9 , further comprising:
performing a single lithography process to form the semiconductor layer, the data line, and the drain electrode.
16. The composition of claim 13 , wherein the silicone compound is at least one compound selected from a group consisting of (3-glycide oxypropyl)trimethoxy silane, (3-glycide oxypropyl)triethoxy silane, (3-glycide oxypropyl)methyl dimethoxy silane, (3-glycide oxypropyl)methyl diethoxy silane, (3-glycide oxypropyl)dimethyl methoxy silane, (3-glycide oxypropyl)dimethyl ethoxy silane, 3,4-epoxy butyl trimethoxy silane, 3,4-epoxy butyl triethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl trimethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl triethoxy silane, and aminopropyl trimethoxy silane.
17. The method of claim 10 , wherein the single lithography process is performed using a photoresist that comprises a first portion and a second portion that is thinner than the first portion.
18. The method of claim 11 , further comprising:
disposing the first portion of the photoresist on the data line and the drain electrode; and
disposing the second portion of the photoresist between the source electrode and the drain electrode.
19. The composition of claim 17 , wherein the silicone compound is at least one compound selected from a group consisting of (3-glycide oxypropyl)trimethoxy silane, (3-glycide oxypropyl)triethoxy silane, (3-glycide oxypropyl)methyl dimethoxy silane, (3-glycide oxypropyl)methyl diethoxy silane, (3-glycide oxypropyl)dimethyl methoxy silane, (3-glycide oxypropyl)dimethyl ethoxy silane, 3,4-epoxy butyl trimethoxy silane, 3,4-epoxy butyl triethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl trimethoxy silane, 2-(3,4-epoxy cyclohexyl)ethyl triethoxy silane, and aminopropyl trimethoxy silane.