Pad conditioner dresser with varying pressure
View Patent ↗Methods for extending the service life of a CMP pad dresser having a substrate and a plurality of superabrasive particles disposed thereon which is used to dress a CMP pad are disclosed and described. Generally, the method may include dressing the chemical mechanical polishing pad with the dresser and varying pressure between the pad and the dresser in relation to superabrasive particle wear, such that the dresser life is extended.
1. A method for extending the service life of a chemical mechanical polishing pad dresser used to dress a chemical mechanical polishing pad, the dresser having a substrate and a plurality of superabrasive particles disposed thereon, comprising:
dressing the chemical mechanical polishing pad with the dresser;
determining superabrasive particle wear by examining at least a portion of the plurality of superabrasive particles; and
varying pressure between the pad and the dresser in relation to superabrasive particle wear, such that the dresser life is extended wherein varying the pressure between the pad and the dresser includes gradually increasing the pressure between the pad and the dresser, wherein the pressure between the pad and the dresser is automatically increased in response to dresser superabrasive particle wear.
2. The method of claim 1 , wherein determining superabrasive particle wear includes examination of a dressed chemical mechanical polishing pad surface.
3. The method of claim 2 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity density.
4. The method of claim 2 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity depth.
5. The method of claim 2 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity width.
6. The method of claim 2 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity length.
7. The method of claim 1 , wherein determining superabrasive particle wear includes an estimation of superabrasive particle wear based on dresser use.
8. The method of claim 1 , wherein the pressure between the pad and the dresser is gradually increased over time as the dresser is used.
9. The method of claim 8 , wherein the gradual increase over time is non-linear.
10. The method of claim 9 , wherein the non-linear gradual increase is an exponential increase.
11. The method of claim 1 , wherein the pressure between the pad and the dresser is increased following a dressing operation of the dresser.
12. The method of claim 1 , wherein the pressure between the pad and the dresser is increased following each dressing operation of the dresser.
13. The method of claim 1 , wherein the pressure between the pad and the dresser is increased during a dressing operation.
14. The method of claim 1 , wherein the pressure between the pad and the dresser is increased following completion of polishing of a wafer.
15. The method of claim 1 , wherein the pressure between the pad and the dresser is increased for each wafer polished by the pad.
16. The method of claim 1 , wherein varying the pressure between the pad and the dresser includes decreasing the pressure between the pad and the dresser.
17. The method of claim 1 , wherein the pressure between the pad and the dresser is decreased following dresser replacement.
18. A method for extending the service life of a chemical mechanical polishing pad dresser used to dress a chemical mechanical polishing pad, the dresser having a substrate and a plurality of superabrasive particles disposed thereon, comprising:
dressing the chemical mechanical polishing pad with the dresser; and
varying the pressure between the pad and the dresser, including gradually increasing the pressure between the pad and the dresser in a non-linear manner over time as the dresser is used, such that the dresser life is extended, wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in an asperity property selected from average asperity density, average asperity depth average asperity width, average asperity length, and combinations thereof.
19. The method of claim 18 , further comprising determining superabrasive particle wear.
20. The method of claim 19 , wherein determining superabrasive particle wear includes examination of a dressed chemical mechanical polishing pad surface.
21. The method of claim 20 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity density.
22. The method of claim 20 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity depth.
23. The method of claim 20 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity width.
24. The method of claim 20 , wherein pressure is increased when the chemical mechanical polishing pad surface exhibits a decrease in average asperity length.
25. The method of claim 19 , wherein determining superabrasive particle wear includes examination of at least a portion of the plurality of superabrasive particles disposed on the dresser.
26. The method of claim 20 , wherein determining superabrasive particle wear includes an estimation of superabrasive particle wear based on dresser use.
27. The method of claim 18 , wherein the non-linear gradual increase is an exponential increase.
28. The method of claim 18 , wherein the pressure between the pad and the dresser is increased following a dressing operation of the dresser.
29. The method of claim 18 , wherein the pressure between the pad and the dresser is increased following each dressing operation of the dresser.
30. The method of claim 18 , wherein the pressure between the pad and the dresser is increased during a dressing operation.
31. The method of claim 18 , wherein the pressure between the pad and the dresser is increased following completion of polishing of a wafer.
32. The method of claim 18 , wherein the pressure between the pad and the dresser is increased for each wafer polished by the pad.
33. The method of claim 18 , wherein the pressure between the pad and the dresser is automatically increased.
34. The method of claim 18 , wherein the pressure between the pad and the dresser is decreased following dresser replacement.
35. The method of claim 18 , further comprising:
detecting an increase in friction between the pad and the dresser due to superabrasive particle wear; and
increasing the pressure between the pad and the dresser as a result of the increase in friction.