Spatial light modulator with charge-pump pixel cell

1. A method, comprising:

for a memory cell comprising a transistor and a capacitor, wherein the drain of the transistor is connected to a first plate of the capacitor forming a voltage node,

connecting the source to a bitline, the gate to a wordline, and a second plate of the capacitor to a pump line; and

actuating the memory cell, comprising:

driving a first voltage signal through the wordline;

driving a second voltage signal through the wordline; and

wherein the first and second signals are independent of each other.

2. The method of claim 1 , comprising:

setting the second plate of the capacitor through the pump line to a high or low voltage state independent form a voltage state of the gate and a voltage state of the wordline.

3. The method of claim 1 , comprising:

setting the gate to a high or low voltage state through the wordline independent from a voltage state of the second plate of the capacitor.

4. The method of claim 1 , wherein the first voltage signal is a “low voltage state”, wherein the second voltage signal is a “high voltage signal”; and wherein the voltage node remains the same voltage status as the bitline.

5. The method of claim 1 , wherein the first and second voltage signals are “high voltage states”; and wherein the voltage node is at a “high voltage state” if the bitline is at a “high voltage state”; and wherein the voltage node is at an “intermediate voltage state” between the “high voltage state” and “low voltage state” if the bitline is at a “low voltage state”.

6. The method of claim 1 , wherein the first voltage signal is a “high voltage state”, wherein the second voltage signal is a “low voltage signal”; and wherein the voltage node is set to an “intermediate voltage state” between the “high voltage state” and “low voltage state” if the bitline is at a “high voltage state”.

7. The method of claim 1 , further comprising:

connecting the voltage node to an electrode such that the electrode can be at the same voltage as the voltage node.

8. The method of claim 7 , wherein the electrode is associated with a reflective and deflectable mirror plate such that an electrostatic field is capable of being established between the electrode and mirror plate.

9. The method of claim 8 , wherein the mirror plate is a member of a micromirror device.

10. The method of claim 9 , comprising:

switching the mirror plate of the micromirror between an ON and OFF state by adjusting the electrostatic field between the mirror plate and electrode through the wordline, bitline, and pump line.

11. The method of claim 10 , wherein the memory cell is a member of an array of memory cells each of which is associated with one of mirror plates of an array of micromirror devices.

12. The method of claim 11 , wherein the micromirror devices of the array are members of a spatial light modulator of a projection system.

13. The method of claim 1 , wherein the memory cell is a member of an array of memory cells.

14. The method of claim 1 , wherein said storage node controls an optical state of a pixel in a spatial light modulator.

15. The method of claim 14 , wherein said pixel is a liquid-crystal pixel cell.

16. The method of claim 1 , wherein the transistor and capacitor are formed on a poly-silicon.

17. The method of claim 1 , wherein both plates of the capacitor are formed on a semiconductor substrate by a film deposition technique.

18. The method of claim 17 , wherein the transistor is a P-MOS.

19. The method of claim 17 , wherein the transistor is a N-MOS.

20. The method of claim 17 , wherein the first and second plates are separated by a dielectric layer disposed therebetween.