Semiconductor device and method of manufacturing the same
View Patent ↗A semiconductor device has power supply pads including a first power supply pad and at least one second power supply pad that are connected to internal power supply wirings through an internal circuit so that the first and second power supply pads are set to the same potential. The first power supply pad is bonded by a wire to a lead to which a supply voltage is applied and is connected to the round power supply wiring through a round power supply connection wiring. A signal pad from which electrostatic noise enters into the semiconductor device is provided. An input protection circuit is connected between the signal pad and the internal circuit and is connected to the round power supply wiring through a protection circuit power supply wiring. The second power supply pad is not bonded by a wire to a lead to which a supply voltage is applied and is not connected to the round power supply wiring so that when electrostatic noise enters the signal pad, the electrostatic noise is discharged to the exterior of the semiconductor device without the electrostatic noise being led to the internal circuit.
1. A semiconductor device, comprising:
a round power supply wiring;
a plurality of power supply pads including a first power supply pad and at least one second power supply pad that are connected to internal power supply wirings through an internal circuit so that the first and second power supply pads are set to the same potential, the first power supply pad being bonded by a wire to a lead to which a supply voltage is applied and being connected to the round power supply wiring through a round power supply connection wiring;
a signal pad from which electrostatic noise enters into the semiconductor device; and
an input protection circuit connected between the signal pad and the internal circuit and connected to the round power supply wiring through a protection circuit power supply wiring;
wherein the second power supply pad is not bonded by a wire to a lead to which a supply voltage is applied and is not connected to the round power supply wiring so that when electrostatic noise enters the signal pad, the electrostatic noise is discharged to the exterior of the semiconductor device without the electrostatic noise being led to the internal circuit.
2. A semiconductor device according to claim 1 ; wherein the at least one second power supply pad comprises two power supply pads that are not bonded by respective wires to respective leads to which a supply voltage is applied and are not connected to the round power supply wiring.
3. A semiconductor device according to claim 1 ; wherein the input protection circuit has a protection diode.
4. A semiconductor device according to claim 1 ; wherein the input protection circuit has a MOS transistor.
5. A semiconductor device according to claim 1 ; wherein the round power supply wiring and the round power supply connection wiring are made of the same metal.
6. A semiconductor device comprising:
a round power supply wiring;
a first power supply pad connected to the round power supply wiring;
a signal pad from which electrostatic noise enters into the semiconductor device;
an input protection circuit connected between the signal pad and an internal circuit and connected to the round power supply wiring; and
at least one second power supply pad that is connected with the first power supply pad to internal power supply wirings through the internal circuit so that the first and second power supply pads are set to the same potential, the second power supply pad being disconnected from the round power supply wiring so that electrostatic noise which enters from the signal pad is prevented from entering the second power supply pad and is discharged externally of the semiconductor device without being led to the internal circuit.
7. A semiconductor device according to claim 6 ; wherein the at least one second power supply pad comprises two power supply pads.
8. A semiconductor device according to claim 6 ; wherein the input protection circuit has a protection diode.
9. A semiconductor device according to claim 6 ; wherein the input protection circuit has a MOS transistor.