Unpowered switch and bleeder circuit

1. A monolithic integrated circuit (IC) RF switch comprising a plurality of MixedMode RF switches coupled together in a cascaded series-shunt configuration such that the output of a preceding MixedMode RF switch is coupled to the input of an immediately subsequent MixedMode RF switch, an input of the cascaded series-shunt configuration being the input of a first one of the cascaded MixedMode RF switches and an output of the cascaded series-shunt configuration being the output of a last one of the MixedMode RF switches, wherein a MixedMode RF switch is defined as one of the following RF switch types:

(a) a depletion-enhancement (D-E) RF switch comprising:

(1) a depletion-mode switch (D-Sw) circuit operatively coupled to receive a first RF signal from an RF input of the D-E RF switch and to selectively convey the first RF signal to an output of the D-E RF switch under control of a first control line C 1 ; and

(2) an enhancement-mode shunt (E-Sh) circuit operatively coupled to receive the first RF signal and to selectively convey the first RF signal to ground under control of a second control line C 1 x ; and

(b) an enhancement-depletion (E-D) RF switch comprising:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to receive a second RF signal from an input of the E-D RF switch and to selectively convey the second RF signal to an output of the E-D RF switch under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to receive the second RF signal from the input of the E-D RF switch and to selectively convey the second RF signal to ground under control of a fourth control line C 2 x .

2. The IC RF switch of claim 1 , wherein each MixedMode RF switch is a D-E RF switch.

3. The IC RF switch of claim 1 , wherein each MixedMode RF switch is an E-D RF switch.

4. A monolithic integrated circuit (IC) RF switch comprising at least one RF switch selected from the following RF switch types:

(a) a depletion-enhancement (D-E) RF switch comprising:

(1) a depletion-mode switch (D-Sw) circuit operatively coupled to receive a first RF signal from an RF input of the D-E RF switch and to selectively convey the first RF signal to an output of the D-E RF switch under control of a first control line C 1 ; and

(2) an enhancement-mode shunt (E-Sh) circuit operatively coupled to receive the first RF signal and to selectively convey the first RF signal to ground under control of a second control line C 1 x ; and

(b) an enhancement-depletion (E-D) RF switch comprising:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to receive a second RF signal from an input of the E-D RF switch and to selectively convey the second RF signal to an output of the E-D RF switch under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to receive the second RF signal from the input of the E-D RF switch and to selectively convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein when the IC RF switch is not provided with operating power it operates in an UNPOWERED-STATE, and wherein when the IC RF switch is provided with operating power it operates in a POWERED-STATE, further comprising a bleeder circuit operatively coupled to ground and to one of the control lines C 1 , C 1 x , C 2 and C 2 x , wherein the bleeder circuit has a first impedance between ground and said one of the control lines when the RF switch operates in the POWERED-STATE, and a second impedance between ground and said one of the control lines when the RF switch operates in the UNPOWERED-STATE, and the second impedance is less than the first impedance.

5. The IC RF switch of claim 4 , wherein the bleeder circuit further comprises:

a) a first depletion-mode p-type transistor (DP 1 ) having a first channel node operatively coupled to said one of the control lines;

b) a first depletion-mode n-type transistor having a first channel node operatively coupled to a second channel node of DP 1 and a second channel node operatively coupled to ground;

c) a second depletion-mode p-type transistor (DP 2 ) having a first channel node operatively coupled to a gate of DP 1 , a second channel node operatively coupled to a gate of DN 1 , and a gate operatively coupled to a bias supply voltage VDD;

d) a VDD voltage divider circuit operatively coupled to VDD, ground, the gate of DP 1 , and the first channel node of DP 2 to convey a divided voltage level of VDD to the gate of DP 1 and to the first channel node of DP 2 ; and

e) a VSS voltage divider circuit operatively coupled to a bias supply voltage VSS, ground, the gate of DN 1 , and the second channel node of DP 2 to convey a divided voltage level of VSS to the gate of DN 1 and to the second channel node of DP 2 .

6. The IC RF switch of claim 5 , wherein the bleeder circuit further comprises:

a) a third depletion-mode p-type transistor (DP 3 ) interposed between the first channel node of DP 1 and said one of the control lines, wherein the first channel node of DP 1 is operatively coupled to a second channel node of DP 3 , a first channel node of DP 3 is operatively coupled to said one of the control lines, and a gate of DP 3 is operatively coupled to ground;

b) a second depletion-mode n-type transistor (DN 2 ) interposed between the second node of DP 1 and the first channel node of DN 1 , wherein a second channel node of DN 2 is operatively coupled to the first channel node of DN 1 , and a first channel node of DN 2 is operatively coupled to the second channel node of DP 1 , and a gate of DN 2 is operatively coupled to ground; and

c) a fourth depletion-mode p-type transistor (DP 4 ) interposed between the second channel node of DP 2 and both the gate of DN 1 and the VSS voltage divider circuit, wherein a first channel node of DP 4 is operatively coupled to the second channel node of DP 2 , a second channel node of the DP 4 is operatively coupled to the gate of DN 1 , and a gate of DP 4 is operatively coupled to receive the divided voltage level of VDD.

7. The IC RF switch of claim 6 , wherein the bleeder circuit further comprises:

a) a fifth depletion-mode p-type transistor (DP 5 ), wherein a first channel node of DP 5 is operatively coupled to VSS, and wherein a second channel node of DP 5 is operatively coupled to ground, and wherein a gate of DP 5 is operatively coupled to the VDD voltage divider circuit to receive the divided voltage level of VDD; and

b) a capacitor, wherein a first node of the capacitor is operatively coupled to the first channel node of DP 5 and to VSS, and wherein a second node of the capacitor is operatively coupled to ground.

8. A monolithic integrated circuit (IC) RF switch comprising at least one RF switch selected from the following RF switch types:

(a) a depletion-enhancement (D-E) RF switch comprising:

(1) a depletion-mode switch (D-Sw) circuit operatively coupled to receive a first RF signal from an RF input of the D-E RF switch and to selectively convey the first RF signal to an output of the D-E RF switch under control of a first control line C 1 ; and

(2) an enhancement-mode shunt (E-Sh) circuit operatively coupled to receive the first RF signal and to selectively convey the first RF signal to ground under control of a second control line C 1 x ; and

(b) an enhancement-depletion (E-D) RF switch comprising:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to receive a second RF signal from an input of the E-D RF switch and to selectively convey the second RF signal to an output of the E-D RF switch under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to receive the second RF signal from the input of the E-D RF switch and to selectively convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein at least one of the D-Sw circuit, E-Sh circuit, E-Sw circuit, and D-Sh circuit components comprises a plurality of transistors coupled together in a stacked configuration such that channels of the plurality of transistors are coupled in series.

9. The IC RF switch of claim 8 , wherein the plurality of transistors are configured in a symmetrically stacked configuration.

10. The IC RF switch of claim 8 , wherein the plurality of transistors are configured in an asymmetrically stacked configuration.

11. A monolithic integrated circuit single-pole double-throw (SPDT) RF switch, comprising:

(a) a first RF switch for selectively conveying a first RF signal between a first RF input node and an RF common node (RFcommon), the first RF switch including a D-E RF switch that has:

(1) a depletion-mode switch (D-Sw) circuit controlled by a first control line C 1 and operatively coupled to selectively convey the first RF signal to RFcommon; and

(2) an enhancement-mode shunt (E-Sh) circuit controlled by a second control line C 1 x and operatively coupled to selectively convey the first RF signal to ground; and

(b) a second RF switch for selectively conveying a second RF signal between a second RF input node and RFcommon, the second RF switch including an E-D RF switch that has:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to convey the second RF signal to RFcommon under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein the first RF switch or the second RF switch includes a plurality of RF switches cascaded in series between the corresponding input node and RFcommon.

12. The SPDT RF switch of claim 11 , further comprising a plurality of cascaded D-E RF switches configured to selectively convey the first RF signal between the first RF input node and RFcommon.

13. The SPDT RF switch of claim 11 , further comprising a plurality of cascaded E-D RF switches configured to selectively convey the second RF signal between the second RF input node and RFcommon.

14. A monolithic integrated circuit single-pole double-throw (SPDT) RF switch. comprising:

(a) a D-E RF switch for selectively conveying a first RF signal between a first RF input node and an RF common node (RFcommon), including:

(1) a depletion-mode switch (D-Sw) circuit controlled by a first control line C 1 and operatively coupled to selectively convey the first RF signal to RFcommon: and

(2) an enhancement-mode shunt (E-Sh) circuit controlled by a second control line C 1 x and operatively coupled to selectively convey the first RF signal to ground; and

(b) an E-D RF switch for selectively conveying a second RF signal between a second RF input node and RFcommon, including:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to convey the second RF signal to RFcommon under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein when the switch is not provided with operating power it operates in an UNPOWERED-STATE, and wherein when the switch is provided with operating power it operates in a POWERED-STATE, further comprising a bleeder circuit operatively coupled to ground and to one of the control lines, wherein the bleeder circuit has a first impedance between ground and said one of the control lines when the RF switch operates in the POWERED-STATE, and wherein the bleeder circuit has a second impedance between ground and said one of the control lines when the RF switch operates in the UNPOWERED-STATE, and wherein the second impedance is less than the first impedance.

15. A monolithic integrated circuit single-pole double-throw (SPDT) RF switch, comprising:

(a) a D-E RF switch for selectively conveying a first RF signal between a first RF input node and an RF common node (RFcommon), including:

(1) a depletion-mode switch (D-Sw) circuit controlled by a first control line C 1 and operatively coupled to selectively convey the first RF signal to RFcommon; and

(2) an enhancement-mode shunt (E-Sh) circuit controlled by a second control line C 1 x and operatively coupled to selectively convey the first RF signal to ground; and

(b) an E-D RF switch for selectively conveying a second RF signal between a second RF input node and RFcommon, including:

(1) an enhancement-mode switch (E-Sw) circuit operatively coupled to convey the second RF signal to RFcommon under control of a third control line C 2 ; and

(2) a depletion-mode shunt (D-Sh) circuit operatively coupled to convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein at least one of the D-Sw circuit, E-Sh circuit, E-Sw circuit, and D-Sh circuit components comprises a plurality of transistors coupled together in a stacked configuration such that channels of the plurality of transistors are coupled in series.

16. The SPDT RF switch of claim 15 , wherein the plurality of transistors are configured in a symmetrically stacked configuration.

17. The SPDT RF switch of claim 15 , wherein the plurality of transistors are configured in an asymmetrically stacked configuration.

18. A monolithic integrated circuit single-pole double-throw (SPDT) RF switch, comprising:

(a) a first E-D RF switch configured to selectively convey a first RF signal between a first RF input node and an RF common node (RFcommon), including:

(1) a first enhancement-mode switch (E-Sw) circuit operatively coupled to selectively convey the first RF signal to the RFcommon under control of a first control line C 1 ; and

(2) a first depletion-mode shunt (D-Sh) circuit operatively coupled to selectively convey the first RF signal to ground under control of a second control line C 1 x ; and

(b) a second E-D RF switch configured to selectively convey a second RF signal between a second RF input node and RFcommon, including:

(1) a second enhancement-mode switch (E-Sw) circuit operatively coupled to selectively convey the second RF signal to RFcommon under control of a third control line C 2 ; and

(2) a second depletion-mode shunt (D-Sh) circuit operatively coupled to selectively convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein when the switch is not provided with operating power it operates in an UNPOWERED-STATE and when the switch is provided with operating power it operates in a POWERED-STATE, further comprising a bleeder circuit operatively coupled to ground and to at least one of the control lines, wherein the bleeder circuit has a first impedance between ground and said one of the control lines when the RF switch operates in the POWERED-STATE and a second impedance between ground and said one of the control lines when the RF switch operates in the UNPOWERED-STATE, and the second impedance is less than the first impedance.

19. The SPDT RF switch of claim 18 , wherein at least one of the E-D RF switches comprises a plurality of E-D RF switches coupled together in a cascaded series-shunt configuration such that the output of each preceding E-D RF switch is coupled to the input of an immediately subsequent E-D RF switch, an input of the cascaded series-shunt configuration being the input of a first E-D RF switch and an output of the cascaded series-shunt configuration being the output of a last E-D RF switch.

20. A monolithic integrated circuit single-pole double-throw (SPDT) RF switch, comprising:

(a) a first E-D RF switch configured to selectively convey a first RF signal between a first RF input node and an RF common node (RFcommon), including:

(1) a first enhancement-mode switch (E-Sw) circuit operatively coupled to selectively convey the first RF signal to the RFcommon under control of a first control line C 1 ; and

(2) a first depletion-mode shunt (D-Sh) circuit operatively coupled to selectively convey the first RF signal to ground under control of a second control line C 1 x ; and

(b) a second E-D RF switch configured to selectively convey a second RF signal between a second RF input node and RFcommon, including:

(1) a second enhancement-mode switch (E-Sw) circuit operatively coupled to selectively convey the second RF signal to RFcommon under control of a third control line C 2 ; and

(2) a second depletion-mode shunt (D-Sh) circuit operatively coupled to selectively convey the second RF signal to ground under control of a fourth control line C 2 x;

wherein at least one of the first E-Sw circuit, the first D-Sh circuit, the second E-Sw circuit and the second D-Sh circuit comprises a plurality of transistors coupled together in a stacked configuration such that channels of the plurality of transistors are coupled in series.

21. The SPDT RF switch of claim 20 , wherein the plurality of transistors are configured in a symmetrically stacked configuration.

22. The SPDT RF switch of claim 20 , wherein the plurality of transistors are configured in an asymmetrically stacked configuration.